規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | PowerMESH™ II |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 550mOhm @ 5.3A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 43 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1400 pF @ 25 V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
概述
Description
The IRF740 is an N-channel power MOSFET designed for high-speed switching applications. It is widely used in electronic circuits due to its efficiency in handling high voltages and currents. Key specifications include a voltage rating of 400V and a continuous drain current of 10A. The MOSFET has a low on-state resistance, which minimizes power loss and heat generation. Its fast switching capabilities make it suitable for applications such as power supplies, motor drives, and converters.
The IRF740 is housed in a TO-220 package, which allows for easy mounting on heat sinks to manage temperature. Its gate threshold voltage ranges between 2V to 4V, making it compatible with most microcontrollers and logic circuits. The device's gate is insulated by a thin oxide layer, which provides high input impedance and ensures minimal gate current, thereby simplifying the driving requirements.
Overall, the IRF740 is a versatile component ideal for medium to high-power applications, providing a balance between performance, efficiency, and cost.
The IRF740 is housed in a TO-220 package, which allows for easy mounting on heat sinks to manage temperature. Its gate threshold voltage ranges between 2V to 4V, making it compatible with most microcontrollers and logic circuits. The device's gate is insulated by a thin oxide layer, which provides high input impedance and ensures minimal gate current, thereby simplifying the driving requirements.
Overall, the IRF740 is a versatile component ideal for medium to high-power applications, providing a balance between performance, efficiency, and cost.
Equivalent
The IRF740 is an N-channel MOSFET, and equivalent products include the STP10NK60Z from STMicroelectronics, the FQP12N60C from ON Semiconductor, and the NTE2398 from NTE Electronics. These alternatives share similar voltage and current ratings, making them potential substitutes for the IRF740 in various applications. Always verify the specifications and pin configurations before using any replacement to ensure compatibility.
Features
The IRF740 is a N-channel power MOSFET known for its efficiency and reliability in switching applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of 400V and a continuous drain current (I_D) of approximately 10A, making it suitable for high-voltage applications.
2. R_DS(on): The on-state resistance is typically around 0.55 ohms, which provides low power loss during operation.
3. Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2.0V to 4.0V, which dictates the minimum voltage needed to turn the MOSFET on.
4. Fast Switching: The IRF740 features fast switching speeds, making it ideal for use in high-frequency circuits.
5. Package: It is typically available in a TO-220 package, which ensures good thermal performance and easy mounting.
6. Temperature Range: It operates effectively within a junction temperature range of -55°C to 150°C.
These features make the IRF740 suitable for applications in power supply, motor control, and other high-voltage electronics.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of 400V and a continuous drain current (I_D) of approximately 10A, making it suitable for high-voltage applications.
2. R_DS(on): The on-state resistance is typically around 0.55 ohms, which provides low power loss during operation.
3. Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2.0V to 4.0V, which dictates the minimum voltage needed to turn the MOSFET on.
4. Fast Switching: The IRF740 features fast switching speeds, making it ideal for use in high-frequency circuits.
5. Package: It is typically available in a TO-220 package, which ensures good thermal performance and easy mounting.
6. Temperature Range: It operates effectively within a junction temperature range of -55°C to 150°C.
These features make the IRF740 suitable for applications in power supply, motor control, and other high-voltage electronics.
Pinout
The IRF740 is an N-channel MOSFET transistor commonly used for high-speed switching applications. It typically comes in a TO-220 package, which includes three pins: Gate (G), Drain (D), and Source (S).
1. Gate (G): This pin is used to control the MOSFET's operation. By applying a voltage to the gate, the MOSFET is turned on or off. Typically, a positive voltage relative to the source is applied to turn on the device.
2. Drain (D): The drain is the pin through which the main current flows when the MOSFET is in the 'on' state. It is the output terminal for the current flowing from the drain to the source.
3. Source (S): The source pin is the terminal through which the current enters the MOSFET. It is typically connected to the ground in many applications.
The IRF740 is known for its high voltage and current capabilities, with a maximum drain-to-source voltage (V_DS) of 400V and a continuous drain current (I_D) of about 10A under specified conditions.
1. Gate (G): This pin is used to control the MOSFET's operation. By applying a voltage to the gate, the MOSFET is turned on or off. Typically, a positive voltage relative to the source is applied to turn on the device.
2. Drain (D): The drain is the pin through which the main current flows when the MOSFET is in the 'on' state. It is the output terminal for the current flowing from the drain to the source.
3. Source (S): The source pin is the terminal through which the current enters the MOSFET. It is typically connected to the ground in many applications.
The IRF740 is known for its high voltage and current capabilities, with a maximum drain-to-source voltage (V_DS) of 400V and a continuous drain current (I_D) of about 10A under specified conditions.
Manufacturer
The IRF740 is a type of power MOSFET, and it was originally manufactured by International Rectifier. International Rectifier was a company known for designing and producing power management devices, including semiconductors such as MOSFETs, IGBTs, and ICs. The company specialized in products that control and convert electrical power efficiently in a variety of applications, such as consumer electronics, automotive, industrial, and more.
In 2015, International Rectifier was acquired by Infineon Technologies, a leading semiconductor manufacturer based in Germany. Infineon continues to produce and supply a wide range of semiconductor products, including those originally offered by International Rectifier. Infineon focuses on sectors like automotive, industrial power control, power management & multimarket, and digital security solutions. They are recognized for their expertise in power electronics, microcontrollers, sensors, and security ICs, making them a key player in the semiconductor industry.
In 2015, International Rectifier was acquired by Infineon Technologies, a leading semiconductor manufacturer based in Germany. Infineon continues to produce and supply a wide range of semiconductor products, including those originally offered by International Rectifier. Infineon focuses on sectors like automotive, industrial power control, power management & multimarket, and digital security solutions. They are recognized for their expertise in power electronics, microcontrollers, sensors, and security ICs, making them a key player in the semiconductor industry.
Application
The IRF740 is an N-channel power MOSFET commonly used in various applications due to its ability to handle high voltages and currents. Typical application areas include:
1. Switching Power Supplies: It is used for converting electricity efficiently in power supply units.
2. Motor Control: Employed in controlling motors, particularly in automotive and industrial applications.
3. Audio Amplifiers: Used in amplifier circuits because it can efficiently amplify signals.
4. DC-DC Converters: Facilitates voltage regulation in electronic devices.
5. Lighting: Used in LED drivers and other lighting applications.
6. Inverters: Integral for converting DC to AC in inverter systems.
Its robustness and efficiency make it suitable for high-power and high-frequency applications.
1. Switching Power Supplies: It is used for converting electricity efficiently in power supply units.
2. Motor Control: Employed in controlling motors, particularly in automotive and industrial applications.
3. Audio Amplifiers: Used in amplifier circuits because it can efficiently amplify signals.
4. DC-DC Converters: Facilitates voltage regulation in electronic devices.
5. Lighting: Used in LED drivers and other lighting applications.
6. Inverters: Integral for converting DC to AC in inverter systems.
Its robustness and efficiency make it suitable for high-power and high-frequency applications.
Package
The IRF740 is typically available in a TO-220 package. This package type is commonly used for power transistors due to its ability to handle high power and provide good heat dissipation, allowing for mounting on a heatsink if necessary.
