規格
| 屬性 | 價值 |
| Package | Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概述
Description
The IRF640PBF is an N-channel power MOSFET designed for high-speed switching applications. It features a drain-to-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 18A, making it suitable for a range of power applications. With low on-resistance (R_DS(on)) and fast switching capabilities, it is often used in power supplies, motor controllers, and other electronic circuits requiring efficient power management.
This MOSFET is housed in a TO-220AB package, which provides good thermal performance and ease of mounting. The "PBF" in its name indicates it's lead-free and RoHS compliant, aligning with environmental standards. The device's input capacitance and gate charge ensure efficient operation at high frequencies, while its avalanche energy rating enhances reliability in demanding conditions.
Overall, the IRF640PBF is valued for its balance of performance, reliability, and cost-effectiveness, making it a popular choice in both consumer electronics and industrial applications. Its design allows for easy integration into a wide variety of circuits, offering robust performance in switching and amplification roles.
This MOSFET is housed in a TO-220AB package, which provides good thermal performance and ease of mounting. The "PBF" in its name indicates it's lead-free and RoHS compliant, aligning with environmental standards. The device's input capacitance and gate charge ensure efficient operation at high frequencies, while its avalanche energy rating enhances reliability in demanding conditions.
Overall, the IRF640PBF is valued for its balance of performance, reliability, and cost-effectiveness, making it a popular choice in both consumer electronics and industrial applications. Its design allows for easy integration into a wide variety of circuits, offering robust performance in switching and amplification roles.
Equivalent
The IRF640PBF is a N-channel MOSFET. Equivalent products include the STMicroelectronics STP16NF06, ON Semiconductor NTP6410, and Fairchild Semiconductor FDPF16N50T. These alternatives have similar specifications, such as voltage, current, and Rds(on) characteristics, making them suitable replacements in many applications. Always verify the specifications and pin configurations to ensure compatibility with your specific circuit requirements.
Features
The IRF640PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 18A, making it suitable for medium to high-power applications.
2. R_DS(on): The on-resistance is typically 0.18 ohms, which helps minimize power loss and ensures efficient operation.
3. Fast Switching: It offers rapid switching speeds due to its low gate charge, enhancing performance in high-frequency applications.
4. Thermal Performance: The device features a maximum junction temperature of 175°C, allowing it to operate effectively under high-temperature conditions.
5. Package: It is typically available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Lead-Free: The PBF suffix indicates that it is lead-free and RoHS compliant, aligning with environmental standards.
These features make the IRF640PBF a versatile choice for applications such as power supply circuits, motor drives, and DC-DC converters.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 18A, making it suitable for medium to high-power applications.
2. R_DS(on): The on-resistance is typically 0.18 ohms, which helps minimize power loss and ensures efficient operation.
3. Fast Switching: It offers rapid switching speeds due to its low gate charge, enhancing performance in high-frequency applications.
4. Thermal Performance: The device features a maximum junction temperature of 175°C, allowing it to operate effectively under high-temperature conditions.
5. Package: It is typically available in a TO-220 package, facilitating easy mounting and heat dissipation.
6. Lead-Free: The PBF suffix indicates that it is lead-free and RoHS compliant, aligning with environmental standards.
These features make the IRF640PBF a versatile choice for applications such as power supply circuits, motor drives, and DC-DC converters.
Pinout
The IRF640PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used for switching applications. It is a 3-pin device, typically housed in a TO-220 package. The three pins are:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): Current flows into the MOSFET through this pin when it is in the 'on' state (conducting).
3. Source (S): This is the terminal through which current exits the MOSFET when it is conducting.
The IRF640PBF is used for high-speed switching applications, capable of handling significant power levels, making it suitable for use in power supplies, motor drives, and other electronic circuits requiring efficient power management.
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): Current flows into the MOSFET through this pin when it is in the 'on' state (conducting).
3. Source (S): This is the terminal through which current exits the MOSFET when it is conducting.
The IRF640PBF is used for high-speed switching applications, capable of handling significant power levels, making it suitable for use in power supplies, motor drives, and other electronic circuits requiring efficient power management.
Manufacturer
The IRF640PBF is manufactured by Infineon Technologies. Infineon is a leading semiconductor company that focuses on designing, developing, and manufacturing a wide array of semiconductor solutions. These solutions include microcontrollers, automotive electronics, power semiconductors, and security controllers, among others. As a key player in the semiconductor industry, Infineon serves various sectors, including automotive, industrial, and consumer electronics, providing technologies that enhance energy efficiency, connectivity, and security.
Application
The IRF640PBF is a power MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Switching Power Supplies: Used in converters and inverters for efficient power management.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Audio Amplifiers: Used for high-fidelity audio amplification due to low distortion.
4. Battery Chargers: Efficiently manages charging processes for batteries.
5. Solar Inverters: Converts DC to AC power in solar energy systems.
6. Uninterruptible Power Supplies (UPS): Ensures consistent power delivery during outages.
7. Lighting Systems: Used in LED drivers and other lighting applications.
These applications benefit from the MOSFET’s low on-resistance and fast switching capabilities.
1. Switching Power Supplies: Used in converters and inverters for efficient power management.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Audio Amplifiers: Used for high-fidelity audio amplification due to low distortion.
4. Battery Chargers: Efficiently manages charging processes for batteries.
5. Solar Inverters: Converts DC to AC power in solar energy systems.
6. Uninterruptible Power Supplies (UPS): Ensures consistent power delivery during outages.
7. Lighting Systems: Used in LED drivers and other lighting applications.
These applications benefit from the MOSFET’s low on-resistance and fast switching capabilities.
Package
The IRF640PBF is a through-hole package MOSFET, specifically in a TO-220 type package. It is designed for easy mounting and efficient heat dissipation, typically used in power supply and switching applications.
