IPG20N06S4L14ATMA2

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IPG20N06S4L14ATMA2

+物料清單

MOSFET 2N-CH 60V 20A 8TDSON

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規格

屬性 價值
Supplier Infineon Technologies,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Bulk
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain(Id) @ 25°C 20A
Rds On(Max) @ Id Vgs 13.7mOhm @ 17A, 10V
Vgs(th)(Max) @ Id 2.2V @ 20µA
Gate Charge(Qg)(Max) @ Vgs 39nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 2890pF @ 25V
Power - Max 50W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount

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