規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain(Id) @ 25°C | 4.7A, 3.4A |
| Rds On(Max) @ Id Vgs | 50mOhm @ 4.7A, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 36nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 740pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The IRF7343TRPBF is a dual N-channel MOSFET produced by Infineon Technologies, optimized for high-efficiency power management applications. Housed in a standard SO-8 package, it features two MOSFETs, each capable of handling a continuous drain current of up to 5.7A, with a maximum drain-source voltage (V_DS) of 55V. One of its key attributes is its low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation.
The device is designed for various applications, including DC-DC converters, load switches, and motor drive circuits. It operates efficiently with a gate-source voltage (V_GS) of ±20V, making it suitable for fast switching applications. The IRF7343TRPBF also provides protection against electrostatic discharge (ESD) and is RoHS compliant, meaning it meets environmental standards for lead-free components.
Overall, the IRF7343TRPBF is valued for its compact design, efficient performance, and reliability in handling medium power loads in electronic systems.
The device is designed for various applications, including DC-DC converters, load switches, and motor drive circuits. It operates efficiently with a gate-source voltage (V_GS) of ±20V, making it suitable for fast switching applications. The IRF7343TRPBF also provides protection against electrostatic discharge (ESD) and is RoHS compliant, meaning it meets environmental standards for lead-free components.
Overall, the IRF7343TRPBF is valued for its compact design, efficient performance, and reliability in handling medium power loads in electronic systems.
Equivalent
The IRF7343TRPBF is a dual N-channel MOSFET. Equivalent products include:
1. FDS6930A - Fairchild Semiconductor (onsemi)
2. SI4936DY - Vishay/Siliconix
3. NTMFS4935N - onsemi
Ensure compatibility by checking key specifications like voltage, current ratings, and package. Always consult the datasheet for each alternative to confirm suitability for your specific application.
1. FDS6930A - Fairchild Semiconductor (onsemi)
2. SI4936DY - Vishay/Siliconix
3. NTMFS4935N - onsemi
Ensure compatibility by checking key specifications like voltage, current ratings, and package. Always consult the datasheet for each alternative to confirm suitability for your specific application.
Features
The IRF7343TRPBF is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. Key features include:
1. Dual MOSFET Configuration: It contains two N-channel MOSFETs in a single package, allowing for compact designs and efficient board space usage.
2. Low On-Resistance: Offers low on-resistance, reducing power loss and improving efficiency in applications like power management and DC-DC converters.
3. Voltage Rating: Typically, it has a drain-to-source voltage rating of around 55V, making it suitable for various mid-voltage applications.
4. Current Handling: Capable of handling significant current levels, which is essential for power-intensive applications.
5. Package Type: Comes in a compact SOIC-8 surface-mount package, facilitating ease of integration into PCB designs.
6. Temperature Range: Operates efficiently across a wide temperature range, ensuring reliability in diverse environments.
7. Applications: Commonly used in load switching, motor drives, and power management circuits due to its high performance and reliability.
These features make the IRF7343TRPBF a versatile and efficient choice for various electronic applications.
1. Dual MOSFET Configuration: It contains two N-channel MOSFETs in a single package, allowing for compact designs and efficient board space usage.
2. Low On-Resistance: Offers low on-resistance, reducing power loss and improving efficiency in applications like power management and DC-DC converters.
3. Voltage Rating: Typically, it has a drain-to-source voltage rating of around 55V, making it suitable for various mid-voltage applications.
4. Current Handling: Capable of handling significant current levels, which is essential for power-intensive applications.
5. Package Type: Comes in a compact SOIC-8 surface-mount package, facilitating ease of integration into PCB designs.
6. Temperature Range: Operates efficiently across a wide temperature range, ensuring reliability in diverse environments.
7. Applications: Commonly used in load switching, motor drives, and power management circuits due to its high performance and reliability.
These features make the IRF7343TRPBF a versatile and efficient choice for various electronic applications.
Pinout
The IRF7343TRPBF is a dual N-channel MOSFET housed in an SO-8 package. It has a total of 8 pins, with the following functions:
1. Pins 1 and 8: Drain of MOSFET 1
2. Pin 2: Source of MOSFET 1
3. Pin 3: Gate of MOSFET 1
4. Pin 4: Gate of MOSFET 2
5. Pin 5: Source of MOSFET 2
6. Pins 6 and 7: Drain of MOSFET 2
This configuration allows the IRF7343TRPBF to be used in various applications such as DC-DC converters, power management, and load switches. The dual MOSFET design provides flexibility in circuit design by allowing two independent switching functions within a single package.
1. Pins 1 and 8: Drain of MOSFET 1
2. Pin 2: Source of MOSFET 1
3. Pin 3: Gate of MOSFET 1
4. Pin 4: Gate of MOSFET 2
5. Pin 5: Source of MOSFET 2
6. Pins 6 and 7: Drain of MOSFET 2
This configuration allows the IRF7343TRPBF to be used in various applications such as DC-DC converters, power management, and load switches. The dual MOSFET design provides flexibility in circuit design by allowing two independent switching functions within a single package.
Manufacturer
The IRF7343TRPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer known for its high-quality semiconductor solutions. The company provides a wide range of products including microcontrollers, digital security devices, sensors, and power semiconductors, among others. Infineon's products are widely used in various applications such as automotive, industrial power control, power management, and digital security, serving industries that require reliable and efficient electronic components.
Application
The IRF7343TRPBF is a dual N-channel MOSFET designed for a variety of applications. Its primary use is in power management and switching applications, including DC-DC converters, motor control, load switching, and synchronous rectification. It is suitable for use in portable electronics, telecommunications, and computing devices due to its low on-resistance and efficient switching capabilities. Additionally, it can be used in battery management systems and automotive applications where compact size and thermal efficiency are critical. Its dual MOSFET configuration allows for versatile design options in compact electronic circuits.
Package
The IRF7343TRPBF is housed in a SOIC-8 package, which is a Small Outline Integrated Circuit package with 8 leads. It is designed for surface-mount technology, offering efficient space utilization on a PCB.
