IPD65R380E6

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IPD65R380E6

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規格

屬性 價值
Packaging Reel
Brand Infineon Technologies
ProductType MOSFETs
Subcategory Transistors
FactoryPackQuantity:FactoryPackQuantity 2500
Technology Si
ShippingRestrictions Mouser does not presently sell this product in your region.
REACH-SVHC Details
MountingStyle SMD/SMT
Package/Case DPAK-3 (TO-252-3)
TransistorPolarity N-Channel
NumberofChannels 1 Channel
Vds-Drain-SourceBreakdownVoltage 650 V
Id-ContinuousDrainCurrent 10.6 A
RdsOn-Drain-SourceResistance 380 mOhms
Vgs-Gate-SourceVoltage - 20 V, + 20 V
Vgsth-Gate-SourceThresholdVoltage 3.5 V
Qg-GateCharge 39 nC
MinimumOperatingTemperature - 55 C
MaximumOperatingTemperature + 150 C
Pd-PowerDissipation 83 W
ChannelMode Enhancement
Tradename CoolMOS
Configuration Single
FallTime 8 nS
Height 2.3 mm
Length 6.5 mm
RiseTime 7 nS
Series CoolMOS E6
TransistorType 1 N-Channel
TypicalTurn-OffDelayTime 57 nS
Width 6.22 mm
Part#Aliases SP000795278 IPD65R38E6XT IPD65R380E6BTMA1
UnitWeight 0.011640 oz

概述

Description

The IPD65R380E6 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) rating of 65A, making it suitable for high-voltage and high-current applications, such as switch-mode power supplies, motor drivers, and inverters.
Key specifications include a low on-resistance (RDS(on)), typically around 0.38 ohms, which minimizes power loss during operation and enhances thermal performance. The MOSFET also supports fast switching speeds, improving efficiency in high-frequency applications.
The IPD65R380E6 is housed in a TO-220 package, facilitating effective heat dissipation. It is part of the Infineon E6 series, which is known for its reliability and robustness in demanding environments. Overall, this MOSFET is an excellent choice for engineers looking for a balance of performance, efficiency, and thermal management in their designs.

Equivalent

The IPD65R380E6 is an N-channel MOSFET by Infineon. Equivalent products include:
1. STP65NF380 (STMicroelectronics)
2. BSC065N06 (Infineon)
3. IKW75N65H3 (Infineon)
4. 65R380 (Rohm Semiconductor)
Always check specific datasheet parameters for voltage, current, and thermal characteristics to ensure compatibility.

Features

The IPD65R380E6 is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 650V maximum drain-source voltage, suitable for high-voltage applications.
2. Current Rating: Continuous drain current of 38A at 25°C, allowing for substantial load handling.
3. RDS(on): Ultra-low on-resistance (0.38Ω), which minimizes conduction losses and improves efficiency.
4. Gate Charge: Low total gate charge (Qg) of 55nC, facilitating faster switching speeds and reducing drive losses.
5. Package Type: Available in DPAK or TO-220 packages for easy thermal management and integration into circuits.
6. Thermal Resistance: Low thermal resistance enhances performance under heat stress.
7. Applications: Ideal for use in power supplies, automotive systems, and motor drives.
These features make the IPD65R380E6 suitable for demanding applications that require reliable performance and efficiency.

Pinout

The IPD65R380E6 is a N-channel power MOSFET produced by Infineon Technologies. It features a pin count of 5. The main functions of the IPD65R380E6 include:
1. Power Switching: It is designed for high-efficiency switching applications in power electronics.
2. Drive Capability: Suitable for driving loads in various applications such as DC-DC converters, inverters, and motor drives.
3. Thermal Performance: It has a low R_DS(on) value, ensuring minimal power loss and heat generation during operation.
Specifications include a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 38A, making it suitable for high-voltage applications. The package type is usually TO-220 or similar, allowing for effective heat dissipation.

Manufacturer

The IPD65R380E6 is manufactured by Infineon Technologies AG, a leading semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, focusing on power management, automotive, industrial, and security applications. The company is well-known for its innovation in power semiconductors, including MOSFETs, IGBTs, and other components that enhance energy efficiency and performance in various electronic devices. Infineon operates globally, serving diverse markets such as automotive, industrial automation, consumer electronics, and the Internet of Things (IoT). Their commitment to sustainability and energy efficiency is reflected in their product offerings, making them a key player in the semiconductor industry.

Application

The IPD65R380E6 is an N-channel MOSFET primarily used in power electronics applications. Its key application areas include:
1. Switching Power Supplies: Used in converters and inverters for efficient energy conversion.
2. Motor Drives: Employed in DC and AC motor control for industrial and automotive applications.
3. DC-DC Converters: Utilized in buck, boost, and buck-boost converters for renewable energy systems.
4. Power Amplifiers: Applied in RF and audio amplifiers for improved efficiency.
5. Electronic Load: Used in testing equipment for simulating loads.
Its high voltage and current ratings make it suitable for various demanding applications.

Package

The IPD65R380E6 is packaged in a TO-220 format. This package type is commonly used for power MOSFETs, providing efficient thermal management and ease of mounting on heatsinks for improved heat dissipation.

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