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IPD60R3K3C6
+物料清單MOSFET N-CH 600V 1.7A TO252-3
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製造商英飛淩科技
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製造商部分 #IPD60R3K3C6
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有存貨13556
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規格
| 屬性 | 價值 |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | CoolMOS™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 1.7A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 3.3Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 40µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.6 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 93 pF @ 100 V |
| Power Dissipation (Max) | 18.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
概述
Description
The IPD60R3K3C6 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It belongs to the CoolMOS™ series, which is known for its high efficiency and performance in power conversion applications. This particular model is characterized by a voltage rating of 650V and a low on-state resistance, making it suitable for high-voltage switching applications such as power supplies, lighting, and motor drives.
The IPD60R3K3C6 utilizes superjunction technology, which allows for reduced conduction and switching losses compared to traditional MOSFETs. This enhances energy efficiency and thermal performance, enabling smaller and more compact power supply designs. Additionally, the device features fast switching capabilities, high-speed operation, and robust avalanche properties, ensuring reliability and durability in various operating conditions.
Overall, the IPD60R3K3C6 is ideal for applications requiring high power density, improved efficiency, and reduced electromagnetic interference (EMI), contributing to more sustainable and cost-effective electronic systems.
The IPD60R3K3C6 utilizes superjunction technology, which allows for reduced conduction and switching losses compared to traditional MOSFETs. This enhances energy efficiency and thermal performance, enabling smaller and more compact power supply designs. Additionally, the device features fast switching capabilities, high-speed operation, and robust avalanche properties, ensuring reliability and durability in various operating conditions.
Overall, the IPD60R3K3C6 is ideal for applications requiring high power density, improved efficiency, and reduced electromagnetic interference (EMI), contributing to more sustainable and cost-effective electronic systems.
Equivalent
The Infineon IPD60R3K3C6 is a power MOSFET typically used in applications requiring efficient power switching. Equivalent products can include MOSFETs with similar specifications from other manufacturers, such as the STMicroelectronics STP60NF06, ON Semiconductor NTP65N06, or Vishay Siliconix SiHP65N06E. When selecting an equivalent, ensure matching key specifications like voltage and current ratings, on-state resistance (R_DS(on)), and package type to ensure proper compatibility with your application.
Features
The IPD60R3K3C6 is a power MOSFET from Infineon's CoolMOS C6 series, designed for high-efficiency applications. Key features include:
1. Voltage Rating: It supports a high-voltage rating, typically around 600V, making it suitable for applications that require robust voltage handling.
2. Current Rating: The continuous drain current is usually around 32A, allowing it to handle significant power loads.
3. RDS(on): It has a low on-resistance (RDS(on)), typically around 0.33 ohms, which minimizes conduction losses and enhances efficiency.
4. Technology: Based on superjunction technology, it offers improved performance in switching applications compared to traditional MOSFETs.
5. Efficiency: Designed to achieve high efficiency with minimal power loss, making it ideal for power supplies and converters.
6. Thermal Performance: Offers efficient thermal management to support higher power density and reliability.
7. Applications: Commonly used in applications such as power supplies, lighting, and motor control due to its efficiency and power handling capabilities.
These features make the IPD60R3K3C6 a versatile and efficient choice for power management solutions.
1. Voltage Rating: It supports a high-voltage rating, typically around 600V, making it suitable for applications that require robust voltage handling.
2. Current Rating: The continuous drain current is usually around 32A, allowing it to handle significant power loads.
3. RDS(on): It has a low on-resistance (RDS(on)), typically around 0.33 ohms, which minimizes conduction losses and enhances efficiency.
4. Technology: Based on superjunction technology, it offers improved performance in switching applications compared to traditional MOSFETs.
5. Efficiency: Designed to achieve high efficiency with minimal power loss, making it ideal for power supplies and converters.
6. Thermal Performance: Offers efficient thermal management to support higher power density and reliability.
7. Applications: Commonly used in applications such as power supplies, lighting, and motor control due to its efficiency and power handling capabilities.
These features make the IPD60R3K3C6 a versatile and efficient choice for power management solutions.
Pinout
The IPD60R3K3C6 is a power MOSFET from Infineon's CoolMOS™ C6 series. It typically comes in a TO-252 package, which has 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the drain to the source when the MOSFET is on.
3. Source (S): This terminal serves as the return path for the current flowing through the drain.
The IPD60R3K3C6 is designed for high-efficiency power conversion and switching applications. It offers low on-resistance and fast switching capabilities, making it suitable for use in power supplies, lighting, and other applications that require efficient power management.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the drain to the source when the MOSFET is on.
3. Source (S): This terminal serves as the return path for the current flowing through the drain.
The IPD60R3K3C6 is designed for high-efficiency power conversion and switching applications. It offers low on-resistance and fast switching capabilities, making it suitable for use in power supplies, lighting, and other applications that require efficient power management.
Manufacturer
The IPD60R3K3C6 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that focuses on various segments within the electronics industry. The company is known for producing a wide range of semiconductor solutions, including microcontrollers, power semiconductors, sensors, and security ICs. Infineon serves numerous markets such as automotive, industrial power control, power management, and digital security solutions.
Infineon Technologies was founded in 1999 as a spin-off from Siemens AG, and it has grown to become one of the leading semiconductor companies worldwide. The company is headquartered in Neubiberg, Germany, and operates globally with a significant presence in Europe, Asia, and North America. Infineon's products are integral to various applications, including automotive electronics, renewable energy technologies, and advanced connectivity solutions, reflecting its role as a key player in enabling modern technological advancements and green energy solutions.
Infineon Technologies was founded in 1999 as a spin-off from Siemens AG, and it has grown to become one of the leading semiconductor companies worldwide. The company is headquartered in Neubiberg, Germany, and operates globally with a significant presence in Europe, Asia, and North America. Infineon's products are integral to various applications, including automotive electronics, renewable energy technologies, and advanced connectivity solutions, reflecting its role as a key player in enabling modern technological advancements and green energy solutions.
Application
The IPD60R3K3C6 is a power MOSFET commonly used in applications requiring efficient power management. Its primary application areas include:
1. Switching Power Supplies: Used in converters and inverters for improving energy efficiency.
2. DC-DC Converters: Ideal for step-down and step-up converters in electronics.
3. Motor Drives: Suitable for controlling motors in industrial and consumer applications.
4. Lighting: Used in LED drivers for efficient lighting solutions.
5. Battery Protection: Helps in safeguarding battery-operated devices by managing power flow.
6. Solar Inverters: Utilized for converting DC from solar panels to AC.
Its low on-resistance and high-speed switching capabilities make it versatile in various high-performance power applications.
1. Switching Power Supplies: Used in converters and inverters for improving energy efficiency.
2. DC-DC Converters: Ideal for step-down and step-up converters in electronics.
3. Motor Drives: Suitable for controlling motors in industrial and consumer applications.
4. Lighting: Used in LED drivers for efficient lighting solutions.
5. Battery Protection: Helps in safeguarding battery-operated devices by managing power flow.
6. Solar Inverters: Utilized for converting DC from solar panels to AC.
Its low on-resistance and high-speed switching capabilities make it versatile in various high-performance power applications.
Package
The IPD60R3K3C6 is a power MOSFET from Infineon Technologies, typically housed in a TO-252 package, also known as a DPAK. This package type is designed for surface mounting and is commonly used in applications requiring efficient power management.
