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IPB80N04S2-H4
+物料清單IPB80N04 - 20V-40V N-CHANNEL AUT
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製造商英飛淩科技
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製造商部分 #IPB80N04S2-H4
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規格
| 屬性 | 價值 |
| Package | Bulk |
| Series | CoolMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.7mOhm @ 80A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 148 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4400 pF @ 25 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO263-3-2 |
概述
Description
The IPB80N04S2-H4 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and switching applications. It is a product of Infineon Technologies, known for its robust performance in power management. This MOSFET features a low on-resistance, which helps minimize power loss and improve overall efficiency in electronic circuits. It is typically used in areas such as motor drives, power supplies, and other power conversion systems.
The IPB80N04S2-H4 is part of the OptiMOS™ family, which is optimized for performance in low-voltage applications. It offers fast switching capabilities and is designed to handle high current loads, making it suitable for applications that require efficient power delivery and thermal management. Key specifications might include a drain-source voltage (V_DS) of 40V, a continuous drain current (I_D) of approximately 80A, and compatibility with various circuit configurations. Offering a balance of performance and reliability, the IPB80N04S2-H4 is a versatile component in modern electronic designs.
The IPB80N04S2-H4 is part of the OptiMOS™ family, which is optimized for performance in low-voltage applications. It offers fast switching capabilities and is designed to handle high current loads, making it suitable for applications that require efficient power delivery and thermal management. Key specifications might include a drain-source voltage (V_DS) of 40V, a continuous drain current (I_D) of approximately 80A, and compatibility with various circuit configurations. Offering a balance of performance and reliability, the IPB80N04S2-H4 is a versatile component in modern electronic designs.
Equivalent
The IPB80N04S2-H4 is a power MOSFET manufactured by Infineon Technologies. Equivalent products from other manufacturers might include:
1. STMicroelectronics: STP80NF04
2. ON Semiconductor: FDP8440
3. Vishay: SIHP80N04S
These equivalents should have similar electrical characteristics, such as voltage and current ratings, and typically be in the same package type like TO-220 or D2PAK. Always verify the datasheets to ensure compatibility.
1. STMicroelectronics: STP80NF04
2. ON Semiconductor: FDP8440
3. Vishay: SIHP80N04S
These equivalents should have similar electrical characteristics, such as voltage and current ratings, and typically be in the same package type like TO-220 or D2PAK. Always verify the datasheets to ensure compatibility.
Features
The IPB80N04S2-H4 is a N-channel power MOSFET designed by Infineon Technologies. It features a voltage rating of 40V and a continuous drain current of 80A, making it suitable for high-performance applications. This MOSFET is part of the OptiMOS series, known for its low on-resistance, which in this case is quite low, minimizing power losses during operation. It is built with advanced technology to enhance efficiency and thermal performance.
The device comes in a TO-263-3 package, which is surface-mountable, facilitating ease of use in various circuit designs. Its fast switching capabilities are ideal for applications that require quick response times, such as in power management systems, motor drives, and DC-DC converters.
Additionally, the IPB80N04S2-H4 is designed to handle high power and provide improved reliability, making it a popular choice in automotive and industrial applications. Its robustness is complemented by a high level of avalanche ruggedness, ensuring durability under stress conditions.
The device comes in a TO-263-3 package, which is surface-mountable, facilitating ease of use in various circuit designs. Its fast switching capabilities are ideal for applications that require quick response times, such as in power management systems, motor drives, and DC-DC converters.
Additionally, the IPB80N04S2-H4 is designed to handle high power and provide improved reliability, making it a popular choice in automotive and industrial applications. Its robustness is complemented by a high level of avalanche ruggedness, ensuring durability under stress conditions.
Pinout
The IPB80N04S2-H4 is a power MOSFET manufactured by Infineon Technologies. It typically comes in a TO-263 package, also known as D²PAK, which generally features three pins. The pin functions are as follows:
1. Gate (G): The gate terminal controls the MOSFET's switching operation. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): The drain is the terminal through which current flows into the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which current flows out of the MOSFET when it is in the "on" state.
This MOSFET is used for various power management applications due to its low on-state resistance and high current handling capabilities. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
1. Gate (G): The gate terminal controls the MOSFET's switching operation. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): The drain is the terminal through which current flows into the MOSFET when it is in the "on" state.
3. Source (S): The source is the terminal through which current flows out of the MOSFET when it is in the "on" state.
This MOSFET is used for various power management applications due to its low on-state resistance and high current handling capabilities. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Manufacturer
The IPB80N04S2-H4 is manufactured by Infineon Technologies. Infineon is a global semiconductor company known for designing and manufacturing a wide range of electronic components and systems. The company specializes in products that serve various industries, including automotive, industrial power control, and security, among others. Infineon is recognized for its expertise in power semiconductors, microcontrollers, sensors, and digital security solutions. The IPB80N04S2-H4, in particular, is a power MOSFET, which is used in applications requiring efficient power management and switching.
Application
The IPB80N04S2-H4 is a power MOSFET used in various applications due to its high efficiency and reliability. Key application areas include:
1. Automotive Systems: Used in electrical systems, including engine control units and electric power steering.
2. Power Management: Effective in DC-DC converters and power supply units.
3. Industrial Automation: Employed in motor control and industrial power systems.
4. Consumer Electronics: Integral in devices requiring efficient power regulation.
5. Renewable Energy Systems: Used in solar inverters and battery management systems.
Its low on-resistance and high-speed switching capabilities make it suitable for applications requiring robust and efficient power handling.
1. Automotive Systems: Used in electrical systems, including engine control units and electric power steering.
2. Power Management: Effective in DC-DC converters and power supply units.
3. Industrial Automation: Employed in motor control and industrial power systems.
4. Consumer Electronics: Integral in devices requiring efficient power regulation.
5. Renewable Energy Systems: Used in solar inverters and battery management systems.
Its low on-resistance and high-speed switching capabilities make it suitable for applications requiring robust and efficient power handling.
Package
The IPB80N04S2-H4 is a MOSFET transistor that comes in a TO-263 package type, which is also known as D2PAK. This package type is designed for surface mounting and provides efficient thermal performance suitable for high-power applications.
