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規格
| 屬性 | 價值 |
| Manufacturer | HUAYI |
| Package / Case | DFN-8(5.2x5.9) |
| Operating Temperature | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 150A |
| Pd - Power Dissipation | 75W |
| Drain to Source Voltage (Vdss) | 40V |
| Rds(on) | 1.4mΩ@10V |
| Gate Threshold Voltage (Vgs(th) @ Id) | 1.9V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 59nC@10V |
| Input Capacitance(Ciss @ Vds) | 4.05nF |
| Reverse Transfer Capacitance (Crss @ Vds) | 33pF@25V |
概述
Description
The HYG015N04LS1C2 is a 40V N-channel MOSFET from HYGON Semiconductor, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 1.5mΩ at VGS=10V, reducing conduction losses.
- High Current Handling: Supports up to 150A continuous drain current (ID).
- Fast Switching: Optimized for switching power supplies, motor control, and DC-DC converters.
- Robust Design: Features a low gate charge (Qg) and avalanche energy rating for reliability.
Packaged in TO-263 (D2PAK), it suits space-constrained, high-power designs. Its low threshold voltage (VGS(th)) ensures compatibility with 3.3V/5V logic-level drivers.
Applications:
- Server/telecom power systems
- Battery management (BMS)
- Automotive & industrial motor drives
For detailed specs, refer to the HYGON datasheet.
- Low On-Resistance (RDS(on)): Typically 1.5mΩ at VGS=10V, reducing conduction losses.
- High Current Handling: Supports up to 150A continuous drain current (ID).
- Fast Switching: Optimized for switching power supplies, motor control, and DC-DC converters.
- Robust Design: Features a low gate charge (Qg) and avalanche energy rating for reliability.
Packaged in TO-263 (D2PAK), it suits space-constrained, high-power designs. Its low threshold voltage (VGS(th)) ensures compatibility with 3.3V/5V logic-level drivers.
Applications:
- Server/telecom power systems
- Battery management (BMS)
- Automotive & industrial motor drives
For detailed specs, refer to the HYGON datasheet.
Equivalent
Equivalent products to the HYG015N04LS1C2 (a 40V N-channel MOSFET) include:
- Infineon IPD90N04S4-04
- Vishay SiR494DP
- ON Semiconductor NTMFS4C04N
These alternatives offer similar specs (40V, low RDS(on), and SMD packages). Verify exact parameters (current rating, gate charge) for compatibility.
- Infineon IPD90N04S4-04
- Vishay SiR494DP
- ON Semiconductor NTMFS4C04N
These alternatives offer similar specs (40V, low RDS(on), and SMD packages). Verify exact parameters (current rating, gate charge) for compatibility.
Features
The HYG015N04LS1C2 is a 40V N-channel MOSFET with the following key features:
- Voltage Rating: 40V
- Current Rating: 150A (continuous)
- Low On-Resistance (RDS(on)): 1.5mΩ (max) @ VGS=10V
- Gate Threshold Voltage (VGS(th)): 1.8V (typ)
- Fast Switching: Low gate charge (Qg) for efficient high-frequency operation
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-263-7 (D2PAK) for high-power applications
- Applications: Power supplies, motor drives, and DC-DC converters
Designed for high efficiency and thermal performance, it suits automotive and industrial uses.
- Voltage Rating: 40V
- Current Rating: 150A (continuous)
- Low On-Resistance (RDS(on)): 1.5mΩ (max) @ VGS=10V
- Gate Threshold Voltage (VGS(th)): 1.8V (typ)
- Fast Switching: Low gate charge (Qg) for efficient high-frequency operation
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-263-7 (D2PAK) for high-power applications
- Applications: Power supplies, motor drives, and DC-DC converters
Designed for high efficiency and thermal performance, it suits automotive and industrial uses.
Pinout
The HYG015N04LS1C2 is a 4-pin N-channel MOSFET with the following pin functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-side).
3. Source (S): Connects to ground (low-side).
4. Kelvin Source (S'): Improves switching performance by reducing parasitic inductance.
This MOSFET is designed for high-efficiency power applications (e.g., DC-DC converters) with a 40V drain-source voltage (VDS) and 15mΩ on-resistance (RDS(on)). The Kelvin source helps minimize switching losses.
Package: PowerFLAT 5x6 (H2PAK).
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-side).
3. Source (S): Connects to ground (low-side).
4. Kelvin Source (S'): Improves switching performance by reducing parasitic inductance.
This MOSFET is designed for high-efficiency power applications (e.g., DC-DC converters) with a 40V drain-source voltage (VDS) and 15mΩ on-resistance (RDS(on)). The Kelvin source helps minimize switching losses.
Package: PowerFLAT 5x6 (H2PAK).
Application
The HYG015N04LS1C2 is a high-performance N-channel MOSFET designed for power management applications. Key areas include:
1. DC-DC Converters – Efficient voltage regulation in power supplies.
2. Motor Control – Used in brushed/brushless motor drives.
3. Battery Management – Protection and switching in Li-ion/power tool batteries.
4. Load Switching – Fast switching in industrial/automotive systems.
5. Solar Inverters – Energy conversion in renewable systems.
Its low on-resistance (RDS(on)) and high current handling make it ideal for high-efficiency, compact designs.
1. DC-DC Converters – Efficient voltage regulation in power supplies.
2. Motor Control – Used in brushed/brushless motor drives.
3. Battery Management – Protection and switching in Li-ion/power tool batteries.
4. Load Switching – Fast switching in industrial/automotive systems.
5. Solar Inverters – Energy conversion in renewable systems.
Its low on-resistance (RDS(on)) and high current handling make it ideal for high-efficiency, compact designs.
Package
The HYG015N04LS1C2 is a power MOSFET in a TO-263-7 (D²PAK) package. This surface-mount package offers efficient thermal performance and is commonly used in high-power applications. It has seven pins and a compact design, suitable for automotive and industrial uses.
