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HIP2101IBZT
+物料清單IC GATE DRVR HALF-BRIDGE 8SOIC
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製造商瑞薩電子
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製造商部分 #HIP2101IBZT
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規格
| 屬性 | 價值 |
| PartStatus | Active |
| DigiKeyProgrammable | Not Verified |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | MOSFET (N-Channel) |
| Voltage-Supply | 9V ~ 14V |
| LogicVoltage-VIL,VIH | 0.8V, 2.2V |
| Current-PeakOutput(Source,Sink) | 2A, 2A |
| InputType | Non-Inverting |
| Rise/FallTime(Typ) | 10ns, 10ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| SupplierDevicePackage | 8-SOIC |
| BaseProductNumber | HIP2101 |
| HighSideVoltage-Max(Bootstrap) | 114 V |
概述
Description
To utilize HIP2101IBZT effectively, it is essential to understand its applications in circuits, such as power management, signal processing, or control systems. Additionally, knowledge of proper handling, integration into designs, and compliance with industry standards can enhance functionality and reliability in various projects. For precise usage, consulting the manufacturer's documentation is recommended for comprehensive guidance and best practices.
Equivalent
Features
1. High-Voltage Capability: Supports up to 100V, making it suitable for automotive and industrial applications.
2. Drive Current: Delivers peak output currents of up to 1A for rapid switching, enhancing efficiency.
3. Bootstrap Operation: Utilizes a bootstrap capacitor for high-side driving, facilitating a lower supply voltage.
4. Under-voltage Lockout (UVLO): Integrated UVLO for both high-side and low-side circuits ensures safe operation.
5. Dead Time Control: Features programmable dead time to prevent shoot-through in half-bridge configurations.
6. Thermal Protection: Built-in thermal shutdown offers additional reliability.
7. Small Package: Available in a compact SOP-8 package for space-constrained designs.
These attributes make the HIP2101IBZT ideal for motor control, power management, and other high-efficiency applications.
Pinout
Pin Functions:
1. VDD (Pin 1): Supply voltage for the driver.
2. GND (Pin 2): Ground reference.
3. IN (Pin 3): Input signal to control the high-side MOSFET.
4. BOOT (Pin 4): Bootstrap capacitor connection for high-side gate drive.
5. SW (Pin 5): Switch node connection for high-side MOSFET.
6. OUT (Pin 6): Output to drive the high-side MOSFET.
7. COM (Pin 7): Common connection for the low-side driver and the circuit.
8. OUTL (Pin 8): Output to drive the low-side MOSFET.
This driver is known for its ability to deliver high peak currents and fast switching speeds, making it suitable for applications like motor control and DC-DC converters.
Manufacturer
Application
1. Power Electronics: It drives MOSFETs and IGBTs in power conversion systems.
2. DC-DC Converters: Utilized in buck, boost, and other converter topologies for efficient voltage regulation.
3. Motor Drives: Enhances performance in brushless DC and stepper motor applications.
4. Renewable Energy: Used in inverters for solar panels and wind turbines.
5. Industrial Automation: Supports high-speed switching in various automation equipment.
The device is favored for its low propagation delay and high drive capability.