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GT088N06T
+物料清單N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
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製造商Goford電晶體
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製造商部分 #GT088N06T
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有存貨50
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90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | Goford Semiconductor |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 9mOhm @ 14A, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 24 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1620 pF @ 30 V |
| Power Dissipation (Max) | 75W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
