G33N03D52

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G33N03D52

+物料清單

N30V, 33A,RD<13M@10V,VTH1V~3V, D

  • 製造商Goford電晶體

  • 製造商部分 #G33N03D52

  • 有存貨5321

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Supplier Goford Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 33A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 13mOhm @ 16A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 17.5 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 782 pF @ 15 V
Power Dissipation (Max) 29W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN5*6

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