圖片僅供參考
GD25B512MEYIGR
+物料清單IC FLASH 512MBIT SPI/QUAD 8WSON
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製造商GigaDevice電晶體(香港)有限公司
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製造商部分 #GD25B512MEYIGR
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有存貨16272
365 天品質保證
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90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Series | GD25B |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Clock Frequency | 133 MHz |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Base Product Number | GD25B512 |
| Technology | FLASH - NOR (SLC) |
| Supplier Device Package | 8-WSON (6x8) |
概述
Description
Key aspects of the GD25B512MEYIGR include:
1. SPI Interface: It operates with a Serial Peripheral Interface (SPI), which allows for the integration into a variety of microcontroller systems with minimal pin requirements.
2. Low Power Consumption: The chip is designed for low power consumption, making it suitable for battery-operated devices.
3. Wide Temperature Range: It can function in a wide temperature range, often from -40°C to 85°C, ensuring reliability in various environments.
4. Small Package Size: Typically housed in a compact package, it is suitable for space-constrained applications.
These features make the GD25B512MEYIGR an excellent choice for applications needing reliable and compact flash memory solutions.
Equivalent
1. Winbond W25X512JV
2. Microchip SST25VF512A
3. Macronix MX25V512F
4. ISSI IS25LP512
These alternatives offer similar storage capacity and interface functionality, making them suitable substitutes in various applications. Always check specific data sheets to ensure compatibility regarding voltage, speed, and package type.
Features
1. Memory Architecture: It is organized as 64 sectors, each with 256 bytes, providing flexibility for data management and storage.
2. Interface: It uses a Serial Peripheral Interface (SPI), which supports standard, dual, and quad SPI operations for improved communication speeds and efficiency.
3. Speed: The device supports high-speed clock frequencies, allowing for fast data transfer rates.
4. Voltage Range: It operates at a low voltage range, typically between 2.7V and 3.6V, making it energy-efficient and suitable for battery-powered applications.
5. Write/Erase Cycles: It offers reliable performance with a typical endurance of 100,000 write/erase cycles per sector.
6. Data Retention: The device ensures long-term reliability with a data retention period of up to 20 years.
7. Security: Features include protection mechanisms such as block protection and write enable/disable instructions to secure data against unauthorized access or accidental modifications.
These features make the GD25B512MEYIGR ideal for consumer electronics, industrial control, and other applications requiring non-volatile memory.
Pinout
1. CS# (Chip Select): Activates the device by pulling low.
2. SO (Serial Output): Data output pin for SPI communication.
3. WP# (Write Protect): Protects selected portions of the memory when pulled low.
4. GND (Ground): Ground reference for power supply.
5. SI (Serial Input): Data input pin for SPI communication.
6. SCK (Serial Clock): Clock input for SPI communication.
7. HOLD# (Hold): Pauses the serial communication when pulled low.
8. VCC (Power Supply): Power supply input.
These pins facilitate typical SPI Flash memory operations, including reading, writing, and erasing data. Always refer to the specific datasheet provided by the manufacturer for detailed information and proper usage.