圖片僅供參考
GA10JT12-263
+物料清單TRANS SJT 1200V 25A
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製造商GeneSiC電晶體
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製造商部分 #GA10JT12-263
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有存貨7110
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Part Status | Active |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 25A (Tc) |
| Rds On(Max) @ Id Vgs | 120mOhm @ 10A |
| Input Capacitance(Ciss)(Max) @ Vds | 1403 pF @ 800 V |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
