G3R20MT12N

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G3R20MT12N

+物料清單

SIC MOSFET N-CH 105A SOT227

  • 製造商GeneSiC電晶體

  • 製造商部分 #G3R20MT12N

  • 有存貨203

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正品保證

規格

屬性 價值
Supplier GeneSiC Semiconductor
Package Tube
Series G3R™
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 105A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 15V
RdsOn(Max)@IdVgs 24mOhm @ 60A, 15V
Vgs(th)(Max)@Id 2.69V @ 15mA
GateCharge(Qg)(Max)@Vgs 219 nC @ 15 V
Vgs(Max) +20V, -10V
InputCapacitance(Ciss)(Max)@Vds 5873 pF @ 800 V
PowerDissipation(Max) 365W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Chassis Mount
SupplierDevicePackage SOT-227

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