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G30N03D3
+物料清單N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
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製造商Goford電晶體
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製造商部分 #G30N03D3
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有存貨2808
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正品保證
規格
| 屬性 | 價值 |
| Supplier | Goford Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 30A |
| Rds On(Max) @ Id Vgs | 7mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 825 pF @ 15 V |
| Power Dissipation (Max) | 24W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (3.15x3.05) |
