G08P06D3

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G08P06D3

+物料清單

P60V,RD(MAX)<52M@-10V,VTH-2V~-3.

  • 製造商Goford電晶體

  • 製造商部分 #G08P06D3

  • 有存貨5683

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正品保證

規格

屬性 價值
Supplier Goford Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 8A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 52mOhm @ 6A, 10V
Vgs(th)(Max) @ Id 3.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 25 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2972 pF @ 30 V
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DFN (3.15x3.05)

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