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G06N06S
+物料清單N60V,RD(MAX)<22M@10V,RD(MAX)<35M
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製造商Goford電晶體
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製造商部分 #G06N06S
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有存貨7840
365 天品質保證
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90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | Goford Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 8A |
| Rds On(Max) @ Id Vgs | 22mOhm @ 6A, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 46 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1600 pF @ 30 V |
| Power Dissipation (Max) | 2.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP |
