規格
| 屬性 | 價值 |
| Package | Tube |
| Series | QFET® |
| ProductStatus | Last Time Buy |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 50A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 22mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1540 pF @ 25 V |
| PowerDissipation(Max) | 120W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
概述
Description
The FQP50N06 is an N-channel MOSFET designed for power switching applications. Key features include:
- Voltage Rating: 60V (Drain-Source, VDSS)
- Current Handling: 50A (continuous drain current at 25°C)
- Low On-Resistance: ~0.022Ω (VGS = 10V)
- Gate Threshold: 2–4V (typical for turn-on)
It operates efficiently in DC-DC converters, motor control, and high-current switching circuits. The TO-220 package aids heat dissipation, supporting power dissipation up to 125W (with heatsinking).
Advantages:
- Fast switching speed
- Low gate drive requirements
- Robust thermal performance
Limitations:
- Requires proper gate drive voltage (≥10V for full performance)
- Heat management critical at high currents
Common in power supplies, inverters, and automotive systems. Always refer to the datasheet for precise specifications.
- Voltage Rating: 60V (Drain-Source, VDSS)
- Current Handling: 50A (continuous drain current at 25°C)
- Low On-Resistance: ~0.022Ω (VGS = 10V)
- Gate Threshold: 2–4V (typical for turn-on)
It operates efficiently in DC-DC converters, motor control, and high-current switching circuits. The TO-220 package aids heat dissipation, supporting power dissipation up to 125W (with heatsinking).
Advantages:
- Fast switching speed
- Low gate drive requirements
- Robust thermal performance
Limitations:
- Requires proper gate drive voltage (≥10V for full performance)
- Heat management critical at high currents
Common in power supplies, inverters, and automotive systems. Always refer to the datasheet for precise specifications.
Equivalent
Equivalent products to the FQP50N06 (60V, 50A N-channel MOSFET) include:
- IRFZ44N (55V, 49A)
- IRLZ44N (55V, 47A, Logic-Level)
- STP55NF06 (60V, 55A)
- IRF3205 (55V, 110A, higher current)
- AOD4184 (60V, 84A)
Check datasheets for exact specs before substitution.
- IRFZ44N (55V, 49A)
- IRLZ44N (55V, 47A, Logic-Level)
- STP55NF06 (60V, 55A)
- IRF3205 (55V, 110A, higher current)
- AOD4184 (60V, 84A)
Check datasheets for exact specs before substitution.
Features
The FQP50N06 is an N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.022Ω (at VGS = 10V)
- Fast Switching Speed: Suitable for high-efficiency applications
- High Power Dissipation: Up to 125W
- Gate Threshold Voltage (VGS(th)): 2–4V
- Avalanche Energy Rated: Enhances ruggedness
- Package: TO-220 (easy to mount)
Commonly used in power supplies, motor control, and DC-DC converters due to its high current handling and low conduction losses.
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.022Ω (at VGS = 10V)
- Fast Switching Speed: Suitable for high-efficiency applications
- High Power Dissipation: Up to 125W
- Gate Threshold Voltage (VGS(th)): 2–4V
- Avalanche Energy Rated: Enhances ruggedness
- Package: TO-220 (easy to mount)
Commonly used in power supplies, motor control, and DC-DC converters due to its high current handling and low conduction losses.
Pinout
The FQP50N06 is an N-channel MOSFET with 3 pins in a TO-220 package:
1. Gate (G): Controls the switching operation (typically driven by 4–10V).
2. Drain (D): Connects to the load (handles up to 60V and 50A).
3. Source (S): Ground reference for the gate signal and current return path.
Key features:
- 60V drain-source voltage (VDS)
- 50A continuous drain current (ID)
- Low on-resistance (RDS(on) ≈ 0.027Ω at 10V VGS)
Commonly used in power switching applications like motor drivers, power supplies, and inverters.
1. Gate (G): Controls the switching operation (typically driven by 4–10V).
2. Drain (D): Connects to the load (handles up to 60V and 50A).
3. Source (S): Ground reference for the gate signal and current return path.
Key features:
- 60V drain-source voltage (VDS)
- 50A continuous drain current (ID)
- Low on-resistance (RDS(on) ≈ 0.027Ω at 10V VGS)
Commonly used in power switching applications like motor drivers, power supplies, and inverters.
Application
The FQP50N06, a 60V, 50A N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge drivers, PWM motor controllers.
3. Automotive Systems – Electronic load switches, LED drivers.
4. Audio Amplifiers – Class-D amplifier output stages.
5. General Switching – High-current relays, inverters.
Its low on-resistance (RDS(on)) and high current handling make it suitable for efficient power management in these applications.
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – H-bridge drivers, PWM motor controllers.
3. Automotive Systems – Electronic load switches, LED drivers.
4. Audio Amplifiers – Class-D amplifier output stages.
5. General Switching – High-current relays, inverters.
Its low on-resistance (RDS(on)) and high current handling make it suitable for efficient power management in these applications.
Package
The FQP50N06 is an N-channel MOSFET available in a TO-220 package. This through-hole package is widely used for power applications due to its robust thermal performance and ease of mounting on heat sinks. It has three leads (Gate, Drain, Source) and is suitable for high-current, high-voltage switching.
