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FQP33N10
+物料清單MOSFET N-CH 100V 33A TO220-3
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規格
| 屬性 | 價值 |
| Package / Case | Bulk,Tube |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 33A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 52mOhm @ 16.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 51 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 1500 pF @ 25 V |
| Power Dissipation (Max) | 127W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
概述
Description
- Voltage Rating: 100V
- Current Rating: 33A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.042Ω (at VGS = 10V)
- Fast Switching: Suitable for high-efficiency circuits like DC-DC converters, motor drivers, and power supplies.
- Package: TO-220 (through-hole), ensuring good thermal performance.
It operates with a gate threshold voltage (VGS(th)) of 2–4V, making it compatible with 5V/12V logic. The FQP33N10 is commonly used in medium-power switching applications due to its balance of performance and cost. Always refer to the datasheet for detailed specifications and thermal considerations.
Equivalent
- IRF3205 (55V, 110A)
- IRF1404 (40V, 162A)
- IRLZ44N (55V, 47A)
- STP80NF55-06 (55V, 80A)
- AOT240L (100V, 40A)
Check datasheets for exact specs like RDS(on) and gate charge to ensure compatibility.
Features
- Voltage Rating: 100V drain-to-source voltage (VDSS).
- Current Rating: 33A continuous drain current (ID) at 25°C.
- Low On-Resistance: Typically 50mΩ (RDS(on)) at VGS = 10V.
- Fast Switching: Suitable for high-speed applications.
- Gate Drive Voltage (VGS): ±20V max, with a threshold (VGS(th)) of 2–4V.
- Power Dissipation: 150W (with proper heat sinking).
- Package: TO-220, for easy mounting.
Commonly used in power supplies, motor control, and DC-DC converters due to its efficiency and robustness.
Pinout
1. Gate (G): Controls the switching operation (typically requires 4V to 10V to turn on).
2. Drain (D): Connects to the load (handles up to 100V and 33A continuous current).
3. Source (S): Ground/reference terminal.
Key features:
- 100V drain-source voltage (VDS)
- 33A continuous drain current (ID)
- Low on-resistance (RDS(on) ≈ 0.035Ω)
- TO-220 package (common for power applications).
Used in power switching, motor control, and DC-DC converters.
Manufacturer
Fairchild Semiconductor, founded in 1957, was a pioneer in transistor technology and later expanded into power semiconductors, logic devices, and optoelectronics. It was acquired by ON Semiconductor in 2016, which continues to produce many Fairchild-originated components.
The FQP33N10 is a 100V, 33A MOSFET designed for high-power switching applications, commonly used in power supplies, motor control, and amplifiers.
Fairchild was respected for innovation in power electronics before its acquisition. ON Semiconductor now maintains its legacy products.