FQP17P10

圖片僅供參考

FQP17P10

+物料清單

MOSFET P-CH 100V 16.5A TO220-3

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Package / Case Bulk,Tube
Series QFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 16.5A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 190mOhm @ 8.25A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 39 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 1100 pF @ 25 V
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

概述

Description

The FQP17P10 is a P-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: -100V drain-to-source (VDSS)
- Current Handling: -17A continuous drain current (ID)
- Low On-Resistance: 0.1Ω (typical) for efficient power switching
- Fast Switching: Suitable for high-frequency circuits
Common uses include:
- DC-DC converters
- Motor control
- Load switching in automotive/industrial systems
Packaged in TO-220, it offers thermal efficiency and ease of mounting. Always refer to the datasheet for detailed specs and application guidelines.

Equivalent

The FQP17P10 is a P-channel MOSFET (100V, 17A). Equivalent or similar alternatives include:
- IRF9540 (100V, 19A)
- IRF9Z34N (55V, 19A)
- STP17P10FP (100V, 17A)
- FQP27P06 (60V, 27A)
Check datasheets for exact specs like RDS(on) and gate charge. Always verify compatibility for your circuit.

Features

The FQP17P10 is a P-channel MOSFET with the following key features:
- Voltage Rating: -100V (Drain-Source, VDSS)
- Current Rating: -17A (Continuous Drain Current, ID)
- Low On-Resistance: 0.1Ω (RDS(on)) at VGS = -10V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 75W (TC = 25°C)
- Package: TO-220 (through-hole mounting)
Ideal for power management, motor control, and switching applications.

Pinout

The FQP17P10 is a P-channel MOSFET with 3 pins (TO-220 package).
Pin Functions:
1. Gate (G) – Controls the MOSFET's conductivity.
2. Drain (D) – Connects to the load (higher voltage side for P-channel).
3. Source (S) – Connects to the power supply (lower voltage side).
Key Specs:
- -100V drain-source voltage (VDS).
- -17A continuous drain current (ID).
- Low on-resistance (RDS(on)).
Commonly used in power switching, motor control, and inverters.

Manufacturer

The FQP17P10 is a P-channel MOSFET manufactured by Fairchild Semiconductor, a well-known American semiconductor company.
Fairchild Semiconductor, founded in 1957, was a pioneer in transistor and integrated circuit technology. It was acquired by ON Semiconductor in 2016, which later merged with Microchip Technology (via a subsidiary).
Fairchild specialized in power management, analog, and discrete semiconductors, serving industries like computing, automotive, and industrial applications. The FQP17P10 is part of their MOSFET lineup, designed for switching and amplification tasks.
Today, Fairchild-branded products are still available but are managed by ON Semiconductor.

Application

The FQP17P10 is a P-channel MOSFET commonly used in:
1. Power Management – Switching and regulation in DC-DC converters.
2. Motor Control – Driving small motors in robotics and automotive systems.
3. Load Switching – Efficiently turning high-power loads on/off in industrial and consumer electronics.
4. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
5. LED Drivers – Controlling LED arrays in lighting applications.
Its low on-resistance (RDS(on)) and high current capability make it suitable for medium-power applications.

Package

The FQP17P10 is a P-channel MOSFET typically available in a TO-220 package. This through-hole package is common for power transistors, offering good thermal performance and ease of mounting on heatsinks. It has three pins: gate, drain, and source. The TO-220 package is widely used in power supply and amplification circuits due to its durability and heat dissipation capabilities.