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FQP12N60C
+物料清單POWER FIELD-EFFECT TRANSISTOR, 1
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製造商飛兆電晶體公司
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製造商部分 #FQP12N60C
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規格
| 屬性 | 價值 |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V |
| Power Dissipation (Max) | 225W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
概述
Description
The device is housed in a TO-220 package, facilitating efficient heat dissipation and easy mounting on heat sinks. It is also characterized by fast switching speeds, making it ideal for pulse width modulation (PWM) and other dynamic applications.
The FQP12N60C is often used in conjunction with a gate driver for optimal performance, ensuring efficient control and minimal switching losses. Overall, its robust specifications and reliability make it a popular choice among engineers for both industrial and consumer electronic applications.
Equivalent
Features
1. Voltage Rating: It can handle up to 600V, making it suitable for high-voltage circuits.
2. Current Rating: It has a continuous drain current rating of 12A, allowing for significant power management.
3. RDS(on): Low on-resistance of approximately 0.19Ω at VGS = 10V, which helps minimize power losses during operation.
4. Gate Threshold Voltage: VGS(th) ranges from 2V to 4V, enabling compatibility with low-voltage drive circuits.
5. Fast Switching: Offers excellent switching speeds, making it ideal for applications like switch-mode power supplies and inverters.
6. Package: Available in a TO-220 package, which provides good thermal performance and ease of heat dissipation.
These features make the FQP12N60C suitable for various applications, including motor control, power supplies, and electronic switching.
Pinout
1. Gate (G): Controls the MOSFET's switching; applying a voltage here turns the device on.
2. Drain (D): The terminal through which the load current flows when the MOSFET is on.
3. Source (S): Connected to ground or the negative side of the circuit; it is the terminal that allows current to flow out of the MOSFET when activated.
The FQP12N60C is designed for high-voltage applications, with a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 12A. It is commonly used in power supplies, motor drivers, and other applications requiring efficient switching.
Manufacturer
Fairchild was recognized for its innovation in the semiconductor industry, particularly in power management and analog devices. The acquisition by ON Semiconductor in 2016 expanded ON's portfolio and strengthened its position in the global semiconductor market. ON Semiconductor focuses on providing energy-efficient solutions, catering to a diverse array of sectors including automotive, communication, computing, industrial, and consumer electronics.
Overall, the FQP12N60C is a power MOSFET that is widely used in applications that require high-voltage switching, and it reflects the legacy of Fairchild Semiconductor's commitment to high-performance semiconductor technologies.
Application
1. Switching Power Supplies: For efficient voltage conversion and regulation.
2. Motor Drivers: Controlling DC and stepper motors in industrial and robotics applications.
3. Lighting Control: Used in LED drivers and dimmer circuits.
4. Inverters: For solar panel systems and UPS (Uninterruptible Power Supplies).
5. Class D Audio Amplifiers: Amplifying audio signals with high efficiency.
6. Heating Elements: Used in applications requiring temperature control.
Its high voltage and current ratings make it suitable for various high-power applications.