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FCPF11N60
+物料清單POWER MOSFET, N-CHANNEL, SUPERFE
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製造商飛兆電晶體公司
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製造商部分 #FCPF11N60
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規格
| 屬性 | 價值 |
| Series | SuperFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 25 V |
| Power Dissipation (Max) | 36W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
| Package / Case | TO-220-3 Full Pack |
概述
Description
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Key objectives often include understanding financial statements, mastering budgeting and forecasting, and evaluating investment opportunities. Practical case studies and real-world applications may also be incorporated to enhance learning.
For precise details regarding this specific course, including prerequisites, content, and assessment methods, consult the relevant academic institution's course catalog or syllabus.
Equivalent
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: Capable of handling a continuous drain current (I_D) of 11A, facilitating efficient power management.
3. R_DS(on): Low on-state resistance (R_DS(on)), typically around 0.8Ω, reduces conduction losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2 to 4V, allowing for compatibility with standard driving voltages.
5. Package Type: Available in TO-220 or similar packages for effective heat dissipation.
6. Switching Speed: Fast switching capabilities suited for high-frequency applications, improving overall system performance.
7. Thermal Resistance: Good thermal characteristics to manage heat during operation.
These attributes make the FCPF11N60 ideal for applications in power supplies, motor drivers, and other energy conversion systems.
Pinout
1. Gate (G): This pin controls the transistor's switching. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the pin where the output current flows out of the device. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. It serves as the reference point for the gate voltage.
The FCPF11N60 is typically used in applications such as power management, switching, and motor control due to its high-voltage and current handling capabilities.
Manufacturer
The company primarily serves various sectors, including consumer electronics, industrial applications, automotive, and communications. In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, a larger semiconductor manufacturer that continues to offer Fairchild's product lines, including the FCPF11N60, which is a power MOSFET designed for high-voltage applications. As part of ON Semiconductor, Fairchild's legacy of providing reliable and efficient semiconductor solutions continues, contributing to advancements in energy-efficient systems and electronic devices globally.
Application
1. Switching Power Supplies: Utilized in DC-DC converters and inverters for efficient voltage regulation.
2. Motor Drives: Employed in electric motor control systems for efficient switching and energy management.
3. Lighting: Used in LED drivers and lighting control circuits.
4. Industrial Equipment: Integrated into automation systems and power control circuits.
5. Telecommunications: Suitable for power management in telecommunication devices.
Its high voltage tolerance makes it ideal for applications that require reliable performance under demanding conditions.