規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 1.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 9Ohm @ 800mA, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 520 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概述
Description
The FQD2N100TM is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by ON Semiconductor. This device is primarily used in electronic applications requiring efficient switching and amplification. Key features include a high voltage capability of 1000V, a continuous drain current of 2A, and a low on-state resistance, which promotes efficient energy transfer and minimized power loss. The FQD2N100TM is typically packaged in a TO-252, which is a surface-mount package designed for efficient heat dissipation.
This MOSFET is often employed in applications such as power supplies, lighting systems, and motor controls, where high voltage and fast switching are essential. Its robustness, combined with thermal efficiency, makes it suitable for both industrial and consumer electronics. Additionally, its reliability and performance in harsh environments are bolstered by its rugged construction. Overall, the FQD2N100TM is valued for its balance of performance, efficiency, and thermal management in high-voltage applications.
This MOSFET is often employed in applications such as power supplies, lighting systems, and motor controls, where high voltage and fast switching are essential. Its robustness, combined with thermal efficiency, makes it suitable for both industrial and consumer electronics. Additionally, its reliability and performance in harsh environments are bolstered by its rugged construction. Overall, the FQD2N100TM is valued for its balance of performance, efficiency, and thermal management in high-voltage applications.
Equivalent
The FQD2N100TM is a N-channel MOSFET with specific voltage and current ratings. Equivalent products include:
1. STMicroelectronics STP2NK100Z - Similar N-channel MOSFET with comparable voltage and current ratings.
2. ON Semiconductor NTP2N100 - Another alternative with similar specifications.
3. Vishay SIHP2N100E - Equivalent MOSFET with similar electrical characteristics.
Always verify specifications, such as Vds, Id, Rds(on), and package type, to ensure compatibility with your application.
1. STMicroelectronics STP2NK100Z - Similar N-channel MOSFET with comparable voltage and current ratings.
2. ON Semiconductor NTP2N100 - Another alternative with similar specifications.
3. Vishay SIHP2N100E - Equivalent MOSFET with similar electrical characteristics.
Always verify specifications, such as Vds, Id, Rds(on), and package type, to ensure compatibility with your application.
Features
The FQD2N100TM is a power MOSFET known for its high voltage capabilities and efficient switching performance. Here are its key features:
1. Voltage and Current: It supports a drain-source voltage (V_DS) of 1000V and a continuous drain current (I_D) of 1.7A.
2. Resistance: The device offers a low on-state resistance (R_DS(on)) of approximately 5 Ohms, which reduces power loss during operation.
3. Type: It is an N-channel MOSFET, making it suitable for applications requiring a high-speed switch.
4. Package: The MOSFET comes in a TO-251 package, offering a compact size for design flexibility.
5. Temperature: It operates effectively in a temperature range typically up to 150°C.
6. Applications: Suitable for high-voltage applications including power supplies, lighting, and motor control.
7. Gate Charge: It features a low gate charge, enhancing its efficiency in high-frequency applications.
These features make the FQD2N100TM a robust choice for various electronic applications requiring high voltage and efficient power management.
1. Voltage and Current: It supports a drain-source voltage (V_DS) of 1000V and a continuous drain current (I_D) of 1.7A.
2. Resistance: The device offers a low on-state resistance (R_DS(on)) of approximately 5 Ohms, which reduces power loss during operation.
3. Type: It is an N-channel MOSFET, making it suitable for applications requiring a high-speed switch.
4. Package: The MOSFET comes in a TO-251 package, offering a compact size for design flexibility.
5. Temperature: It operates effectively in a temperature range typically up to 150°C.
6. Applications: Suitable for high-voltage applications including power supplies, lighting, and motor control.
7. Gate Charge: It features a low gate charge, enhancing its efficiency in high-frequency applications.
These features make the FQD2N100TM a robust choice for various electronic applications requiring high voltage and efficient power management.
Pinout
The FQD2N100TM is a type of N-channel MOSFET. It is typically used in power management applications due to its high voltage capability. This component comes in a TO-252 package, which commonly features three pins. Here's a brief overview of its pin functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET when it is on. This pin is connected to the load in most applications.
3. Source (S): The source is where the current exits the MOSFET. It is typically connected to ground in common-source configurations.
These three pins enable the FQD2N100TM to function effectively as a switch or amplifier in electronic circuits.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET when it is on. This pin is connected to the load in most applications.
3. Source (S): The source is where the current exits the MOSFET. It is typically connected to ground in common-source configurations.
These three pins enable the FQD2N100TM to function effectively as a switch or amplifier in electronic circuits.
Manufacturer
The FQD2N100TM is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor company that specializes in designing and manufacturing a broad range of semiconductor components, including power and signal management, logic, discrete, and custom devices. Their products serve a wide array of applications across various industries, including automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace. Onsemi is known for its focus on energy-efficient solutions, helping to drive innovation in areas such as electric vehicles, smart home technology, and energy management systems.
Application
The FQD2N100TM is a N-channel MOSFET, typically used in high-voltage applications due to its 1000V rating. Its application areas include:
1. Power Supply Circuits: Used in switch-mode power supplies for efficient power conversion.
2. Lighting Systems: Suitable for driving high-intensity discharge lamps or LED arrays.
3. Motor Control: Applied in controlling motors in industrial or consumer electronics.
4. Telecommunications: Utilized in equipment requiring high-voltage switching.
5. Renewable Energy Systems: Employed in solar inverters and wind turbine controllers.
6. Automotive: Used in electric vehicle systems for efficient energy management.
Its design ensures high-speed switching and low on-state resistance, ideal for these applications.
1. Power Supply Circuits: Used in switch-mode power supplies for efficient power conversion.
2. Lighting Systems: Suitable for driving high-intensity discharge lamps or LED arrays.
3. Motor Control: Applied in controlling motors in industrial or consumer electronics.
4. Telecommunications: Utilized in equipment requiring high-voltage switching.
5. Renewable Energy Systems: Employed in solar inverters and wind turbine controllers.
6. Automotive: Used in electric vehicle systems for efficient energy management.
Its design ensures high-speed switching and low on-state resistance, ideal for these applications.
Package
The FQD2N100TM is a N-channel MOSFET transistor, and it typically comes in a TO-252 package, also known as DPAK. This package type is designed for surface mounting on printed circuit boards and is commonly used for its thermal efficiency and compact size.
