規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V |
| Rds On(Max) @ Id Vgs | 115mOhm @ 5.5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6.4 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 350 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
概述
Description
The FQD13N06LTM is an N-channel MOSFET from ON Semiconductor, designed for power management applications. Key features include:
- Voltage Rating: 60V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 0.045Ω (max at VGS = 10V)
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor control, and load switching.
- Logic-Level Gate Drive: Can be driven by 4.5V or higher, making it compatible with microcontrollers.
- Package: TO-252 (DPAK), offering good thermal performance.
Ideal for battery-powered devices, power supplies, and automotive systems due to its balance of efficiency, cost, and robustness. Always refer to the datasheet for detailed specifications and application guidelines.
- Voltage Rating: 60V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 0.045Ω (max at VGS = 10V)
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor control, and load switching.
- Logic-Level Gate Drive: Can be driven by 4.5V or higher, making it compatible with microcontrollers.
- Package: TO-252 (DPAK), offering good thermal performance.
Ideal for battery-powered devices, power supplies, and automotive systems due to its balance of efficiency, cost, and robustness. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
Equivalent products to the FQD13N06LTM (N-channel MOSFET, 60V, 13A) include:
- IRLZ14N (60V, 12A)
- IRFZ24N (60V, 17A)
- STP16NF06 (60V, 16A)
- AOD4184 (60V, 14A)
Check datasheets for exact specs like RDS(on) and gate charge before substitution.
- IRLZ14N (60V, 12A)
- IRFZ24N (60V, 17A)
- STP16NF06 (60V, 16A)
- AOD4184 (60V, 14A)
Check datasheets for exact specs like RDS(on) and gate charge before substitution.
Features
The FQD13N06LTM is an N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 0.045Ω (max at VGS = 10V)
- Fast Switching: Suitable for high-efficiency applications
- Logic-Level Gate Drive: Can be driven by 4.5V or higher
- Low Gate Charge (Qg): Enhances switching performance
- AEC-Q101 Qualified: Automotive-grade reliability
- Package: TO-252 (DPAK), surface-mount design
Ideal for power management in automotive, DC-DC converters, and motor control.
- Voltage Rating: 60V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 0.045Ω (max at VGS = 10V)
- Fast Switching: Suitable for high-efficiency applications
- Logic-Level Gate Drive: Can be driven by 4.5V or higher
- Low Gate Charge (Qg): Enhances switching performance
- AEC-Q101 Qualified: Automotive-grade reliability
- Package: TO-252 (DPAK), surface-mount design
Ideal for power management in automotive, DC-DC converters, and motor control.
Pinout
The FQD13N06LTM is an N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 60V drain-source voltage (VDS).
- 13A continuous drain current (ID).
- Low on-resistance (RDS(on) = 0.045Ω).
- Logic-level gate drive (suitable for 5V control).
Commonly used in power switching, motor control, and DC-DC converters.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- 60V drain-source voltage (VDS).
- 13A continuous drain current (ID).
- Low on-resistance (RDS(on) = 0.045Ω).
- Logic-level gate drive (suitable for 5V control).
Commonly used in power switching, motor control, and DC-DC converters.
Application
The FQD13N06LTM is an N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – Driving small motors in robotics and automotive systems.
3. Switching Circuits – Load switches, relay replacements.
4. LED Drivers – Efficient current control in lighting systems.
5. Consumer Electronics – Power supplies, battery management.
Its low on-resistance (RDS(on)) and high efficiency make it suitable for low-voltage (60V) applications requiring fast switching and minimal power loss.
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – Driving small motors in robotics and automotive systems.
3. Switching Circuits – Load switches, relay replacements.
4. LED Drivers – Efficient current control in lighting systems.
5. Consumer Electronics – Power supplies, battery management.
Its low on-resistance (RDS(on)) and high efficiency make it suitable for low-voltage (60V) applications requiring fast switching and minimal power loss.
Package
The FQD13N06LTM is an N-channel MOSFET housed in a TO-252 (DPAK) surface-mount package. This package type offers efficient thermal performance and compact size, suitable for power applications. Key features include a tab for heat dissipation and three leads (gate, drain, source). It's commonly used in switching circuits, power management, and motor control.
