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FQD12P10TM
+物料清單MOSFET P-CH 100V 9.4A TO252
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製造商部分 #FQD12P10TM
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規格
| 屬性 | 價值 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR) |
| Series | QFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 9.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 290mOhm @ 4.7A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 27 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 800 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
概述
Description
FQD12P10TM is a Fairchild/On Semiconductor power MOSFET in the FQD family. It is a P-channel enhancement‑mode transistor intended for high‑side switching in power‑management circuits. With a negative Vgs threshold, the device turns on when the gate is driven a few volts below the source and turns off as Vgs approaches 0. It offers low on‑resistance and fast switching, suitable for high‑side switches in DC‑DC converters, load switches, and motor-drive applications. The “TM” suffix typically indicates a tape‑and‑reel packaging option.
For exact specifications, consult the official datasheet: Vds, Id, Rds(on), Vgs, gate charge, thermal limits, and safe operating area, which vary by temperature and packaging. If you want, I can fetch the precise figures once you confirm the package type or provide a link to the datasheet.
For exact specifications, consult the official datasheet: Vds, Id, Rds(on), Vgs, gate charge, thermal limits, and safe operating area, which vary by temperature and packaging. If you want, I can fetch the precise figures once you confirm the package type or provide a link to the datasheet.
Features
FQD12P10TM is a P-channel enhancement-mode power MOSFET. Key features typically listed:
- Vds: 100 V, Id: about −12 A (continuous)
- Rds(on): ~0.22 Ω (typ) at Vgs = −4.5 V (max around 0.32 Ω)
- Gate threshold: ~−0.8 to −1.5 V
- Gate drive: logic-level capable (fully on from about −4.5 V to −10 V)
- Technology: trench/low‑charge MOSFET with fast switching
- Packaging: commonly DPAK/TO‑252 (surface-mount; Pb-free), available in other similar packages
- Features: intrinsic body diode, suited for high-side/low-side switching, broad operating temp range (typically −55°C to +150°C)
Note: exact ratings/packaging can vary by manufacturer; please check the specific datasheet for your lot to confirm Vds, Id, Rds(on), and package.
- Vds: 100 V, Id: about −12 A (continuous)
- Rds(on): ~0.22 Ω (typ) at Vgs = −4.5 V (max around 0.32 Ω)
- Gate threshold: ~−0.8 to −1.5 V
- Gate drive: logic-level capable (fully on from about −4.5 V to −10 V)
- Technology: trench/low‑charge MOSFET with fast switching
- Packaging: commonly DPAK/TO‑252 (surface-mount; Pb-free), available in other similar packages
- Features: intrinsic body diode, suited for high-side/low-side switching, broad operating temp range (typically −55°C to +150°C)
Note: exact ratings/packaging can vary by manufacturer; please check the specific datasheet for your lot to confirm Vds, Id, Rds(on), and package.
Pinout
Pin count: 3 leads (G, D, S) with the drain usually tied to the package tab.
Function: a power MOSFET. Gate (G) drives the channel; Drain (D) is the main power terminal (often connected to the tab); Source (S) is the return. It’s used as a fast-switching high/low-side switch in power circuits.
Function: a power MOSFET. Gate (G) drives the channel; Drain (D) is the main power terminal (often connected to the tab); Source (S) is the return. It’s used as a fast-switching high/low-side switch in power circuits.
Manufacturer
- Manufacturer: Fairchild Semiconductor (now part of ON Semiconductor).
- Company type: A global semiconductor company that designs and manufactures discrete devices (e.g., MOSFETs, diodes) and integrated circuits; Fairchild was acquired by ON Semiconductor in 2016.
- Company type: A global semiconductor company that designs and manufactures discrete devices (e.g., MOSFETs, diodes) and integrated circuits; Fairchild was acquired by ON Semiconductor in 2016.
Application
FQD12P10TM is a power MOSFET, so its typical application areas include:
- High-efficiency DC-DC converters and switch-mode power supplies
- High-side/low-side switching in voltage regulators and load-switch circuits
- Motor control and driver applications (DC motors, BLDC)
- Automotive power electronics (power distribution, battery management, protection)
- General power-switching, protection, and inrush/short-circuit protection in consumer electronics
Note: exact use depends on its voltage/current ratings and package.
- High-efficiency DC-DC converters and switch-mode power supplies
- High-side/low-side switching in voltage regulators and load-switch circuits
- Motor control and driver applications (DC motors, BLDC)
- Automotive power electronics (power distribution, battery management, protection)
- General power-switching, protection, and inrush/short-circuit protection in consumer electronics
Note: exact use depends on its voltage/current ratings and package.
Package
DPAK (TO-252) surface-mount package.
