FP35R12W2T4

圖片僅供參考

FP35R12W2T4

+物料清單

  • 製造商英飛淩科技

  • 製造商部分 #FP35R12W2T4

  • 有存貨2959

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Package / Case EASY2B
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Brand Infineon Technologies
Product Type IGBT Modules
Subcategory IGBTs
Series Trenchstop IGBT4 - T4
Mounting Style Screw Mount
Factory Pack Quantity:Factory Pack Quantity 15
Technology Si
Product IGBT Modules
Configuration 3-Phase Inverter
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.85 V
Continuous Collector Current at 25 C 54 A
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 215 W
Maximum Gate Emitter Voltage 20 V
Part # Aliases SP000307559 FP35R12W2T4BOMA1
Packaging Tray
Tradename EasyPIM
Unit Weight 1.375685 oz
Height 12 mm
Length 56.7 mm
Width 62.8 mm

概述

Description

The FP35R12W2T4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. This device is designed for industrial applications, including motor drives, renewable energy systems, and power converters. The "FP" prefix indicates it belongs to the "Fast" IGBT family, which offers rapid switching capabilities, enhancing efficiency and reducing heat generation.
With a rated current of 35A and a voltage rating of 1200V, the FP35R12W2T4 is suitable for medium-voltage applications. Its design includes a robust thermal management system, allowing for effective heat dissipation and improved reliability in challenging environments.
The module typically features a compact, insulated package that simplifies integration into power electronic systems. Additionally, it supports applications requiring high-frequency operation, making it a versatile choice for engineers looking to optimize performance in their designs. Overall, the FP35R12W2T4 stands out for its efficiency, reliability, and suitability for demanding industrial environments.

Equivalent

The FP35R12W2T4 chip is a 1200V IGBT module. Equivalent products include the Infineon FZ1200R12KE3, Mitsubishi CM1200DU-24F, and ON Semiconductor MGC1200J. These alternatives typically offer similar voltage ratings and current capacities, suitable for various applications in power electronics. Always check specifications for compatibility.

Features

The FP35R12W2T4 is a high-performance IGBT module designed for various industrial applications. Key features include:
1. Rated Current: 35 A, suitable for medium to high power applications.
2. Voltage Rating: 1200 V, ensuring robustness in demanding environments.
3. Compact Design: Optimized for space-saving installations with a low thermal resistance.
4. Fast Switching: Enables high-frequency operation, improving efficiency in conversion applications.
5. Thermal Performance: Efficient heat dissipation, enhancing reliability and longevity.
6. Integrated Features: Includes integrated gate drivers and protection features for improved safety and performance.
7. Applications: Ideal for use in inverters, motor drives, and power supplies across industrial sectors.
Overall, the FP35R12W2T4 is engineered for efficiency and reliability, making it suitable for various power electronics applications.

Pinout

The FP35R12W2T4 is a power semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) module. It typically has a pin count of 6. The functions of these pins generally include:
1. Gate (G) - Controls the switching of the IGBT.
2. Collector (C) - Main terminal for current flow.
3. Emitter (E) - Returns current to the source.
4. Thermal pin (optional in some configurations) - Used for temperature sensing.
In practical applications, the FP35R12W2T4 is used in motor drives, inverters, and power management systems, providing efficient switching control for high-power applications. Always refer to the manufacturer's datasheet for specific pin configurations and detailed electrical characteristics.

Manufacturer

The FP35R12W2T4 is a semiconductor device manufactured by Infineon Technologies AG. Infineon is a global company specializing in semiconductor solutions for various applications, including automotive, industrial, and communication technologies. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates in the fields of power semiconductors, microcontrollers, and sensors, among others. The company is known for its innovation in power management and efficiency, particularly in areas like electric vehicles, renewable energy, and smart devices. Infineon serves a diverse range of sectors, emphasizing sustainability and advanced technology development.

Application

The FP35R12W2T4 is a power semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor), commonly used in various applications. Its primary areas include:
1. Industrial Drives: Controlling electric motors in manufacturing processes.
2. Renewable Energy: Inverters for solar power systems and wind turbines.
3. Rail Traction: Power conversion in electric trains and trams.
4. UPS Systems: Ensuring reliable power supply in uninterruptible power supplies.
5. HVAC Systems: Efficient control of heating, ventilation, and air conditioning systems.
These applications leverage its efficiency, fast switching capability, and high voltage ratings.

Package

The FP35R12W2T4 is typically packaged in a TO-247 or similar format, which is a robust, insulated package designed for high-power applications. This type of packaging allows for efficient heat dissipation and easy mounting on heatsinks for optimal thermal management.

與FP35R12W2T4相關的產品