圖片僅供參考
規格
| 屬性 | 價值 |
| Package / Case | EASY2B |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C |
| Brand | Infineon Technologies |
| Product Type | IGBT Modules |
| Subcategory | IGBTs |
| Series | Trenchstop IGBT4 - T4 |
| Mounting Style | Screw Mount |
| Factory Pack Quantity:Factory Pack Quantity | 15 |
| Technology | Si |
| Product | IGBT Modules |
| Configuration | 3-Phase Inverter |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 1.85 V |
| Continuous Collector Current at 25 C | 54 A |
| Gate-Emitter Leakage Current | 400 nA |
| Pd - Power Dissipation | 215 W |
| Maximum Gate Emitter Voltage | 20 V |
| Part # Aliases | SP000307559 FP35R12W2T4BOMA1 |
| Packaging | Tray |
| Tradename | EasyPIM |
| Unit Weight | 1.375685 oz |
| Height | 12 mm |
| Length | 56.7 mm |
| Width | 62.8 mm |
概述
Description
The FP35R12W2T4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. This device is designed for industrial applications, including motor drives, renewable energy systems, and power converters. The "FP" prefix indicates it belongs to the "Fast" IGBT family, which offers rapid switching capabilities, enhancing efficiency and reducing heat generation.
With a rated current of 35A and a voltage rating of 1200V, the FP35R12W2T4 is suitable for medium-voltage applications. Its design includes a robust thermal management system, allowing for effective heat dissipation and improved reliability in challenging environments.
The module typically features a compact, insulated package that simplifies integration into power electronic systems. Additionally, it supports applications requiring high-frequency operation, making it a versatile choice for engineers looking to optimize performance in their designs. Overall, the FP35R12W2T4 stands out for its efficiency, reliability, and suitability for demanding industrial environments.
With a rated current of 35A and a voltage rating of 1200V, the FP35R12W2T4 is suitable for medium-voltage applications. Its design includes a robust thermal management system, allowing for effective heat dissipation and improved reliability in challenging environments.
The module typically features a compact, insulated package that simplifies integration into power electronic systems. Additionally, it supports applications requiring high-frequency operation, making it a versatile choice for engineers looking to optimize performance in their designs. Overall, the FP35R12W2T4 stands out for its efficiency, reliability, and suitability for demanding industrial environments.
Equivalent
The FP35R12W2T4 chip is a 1200V IGBT module. Equivalent products include the Infineon FZ1200R12KE3, Mitsubishi CM1200DU-24F, and ON Semiconductor MGC1200J. These alternatives typically offer similar voltage ratings and current capacities, suitable for various applications in power electronics. Always check specifications for compatibility.
Features
The FP35R12W2T4 is a high-performance IGBT module designed for various industrial applications. Key features include:
1. Rated Current: 35 A, suitable for medium to high power applications.
2. Voltage Rating: 1200 V, ensuring robustness in demanding environments.
3. Compact Design: Optimized for space-saving installations with a low thermal resistance.
4. Fast Switching: Enables high-frequency operation, improving efficiency in conversion applications.
5. Thermal Performance: Efficient heat dissipation, enhancing reliability and longevity.
6. Integrated Features: Includes integrated gate drivers and protection features for improved safety and performance.
7. Applications: Ideal for use in inverters, motor drives, and power supplies across industrial sectors.
Overall, the FP35R12W2T4 is engineered for efficiency and reliability, making it suitable for various power electronics applications.
1. Rated Current: 35 A, suitable for medium to high power applications.
2. Voltage Rating: 1200 V, ensuring robustness in demanding environments.
3. Compact Design: Optimized for space-saving installations with a low thermal resistance.
4. Fast Switching: Enables high-frequency operation, improving efficiency in conversion applications.
5. Thermal Performance: Efficient heat dissipation, enhancing reliability and longevity.
6. Integrated Features: Includes integrated gate drivers and protection features for improved safety and performance.
7. Applications: Ideal for use in inverters, motor drives, and power supplies across industrial sectors.
Overall, the FP35R12W2T4 is engineered for efficiency and reliability, making it suitable for various power electronics applications.
Pinout
The FP35R12W2T4 is a power semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) module. It typically has a pin count of 6. The functions of these pins generally include:
1. Gate (G) - Controls the switching of the IGBT.
2. Collector (C) - Main terminal for current flow.
3. Emitter (E) - Returns current to the source.
4. Thermal pin (optional in some configurations) - Used for temperature sensing.
In practical applications, the FP35R12W2T4 is used in motor drives, inverters, and power management systems, providing efficient switching control for high-power applications. Always refer to the manufacturer's datasheet for specific pin configurations and detailed electrical characteristics.
1. Gate (G) - Controls the switching of the IGBT.
2. Collector (C) - Main terminal for current flow.
3. Emitter (E) - Returns current to the source.
4. Thermal pin (optional in some configurations) - Used for temperature sensing.
In practical applications, the FP35R12W2T4 is used in motor drives, inverters, and power management systems, providing efficient switching control for high-power applications. Always refer to the manufacturer's datasheet for specific pin configurations and detailed electrical characteristics.
Manufacturer
The FP35R12W2T4 is a semiconductor device manufactured by Infineon Technologies AG. Infineon is a global company specializing in semiconductor solutions for various applications, including automotive, industrial, and communication technologies. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates in the fields of power semiconductors, microcontrollers, and sensors, among others. The company is known for its innovation in power management and efficiency, particularly in areas like electric vehicles, renewable energy, and smart devices. Infineon serves a diverse range of sectors, emphasizing sustainability and advanced technology development.
Application
The FP35R12W2T4 is a power semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor), commonly used in various applications. Its primary areas include:
1. Industrial Drives: Controlling electric motors in manufacturing processes.
2. Renewable Energy: Inverters for solar power systems and wind turbines.
3. Rail Traction: Power conversion in electric trains and trams.
4. UPS Systems: Ensuring reliable power supply in uninterruptible power supplies.
5. HVAC Systems: Efficient control of heating, ventilation, and air conditioning systems.
These applications leverage its efficiency, fast switching capability, and high voltage ratings.
1. Industrial Drives: Controlling electric motors in manufacturing processes.
2. Renewable Energy: Inverters for solar power systems and wind turbines.
3. Rail Traction: Power conversion in electric trains and trams.
4. UPS Systems: Ensuring reliable power supply in uninterruptible power supplies.
5. HVAC Systems: Efficient control of heating, ventilation, and air conditioning systems.
These applications leverage its efficiency, fast switching capability, and high voltage ratings.
Package
The FP35R12W2T4 is typically packaged in a TO-247 or similar format, which is a robust, insulated package designed for high-power applications. This type of packaging allows for efficient heat dissipation and easy mounting on heatsinks for optimal thermal management.