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FDS9934C
+物料清單MOSFET N/P-CH 20V 6.5A/5A 8SOIC
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製造商安森美
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製造商部分 #FDS9934C
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規格
| 屬性 | 價值 |
| PartStatus | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 6.5A, 5A |
| RdsOn(Max)@Id,Vgs | 30mOhm @ 6.5A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 9nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 650pF @ 10V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| SupplierDevicePackage | 8-SOIC |
| BaseProductNumber | FDS9934 |
概述
Description
The device is packaged in a compact surface-mount format, facilitating easy integration into various circuit designs. Its fast switching speeds contribute to improved efficiency in high-frequency applications. Additionally, the FDS9934C is characterized by its low gate threshold voltage, making it compatible with low-voltage control signals.
Overall, FDS9934C is an ideal choice for designers seeking to optimize performance in compact and power-sensitive applications, combining reliability with robust electrical characteristics.
Equivalent
Features
1. Low On-Resistance: It offers a low R_DS(on) to minimize power loss and improve efficiency.
2. High Speed: Capable of fast switching, making it suitable for DC-DC converters and other fast applications.
3. Dual Configuration: Contains two MOSFETs in one package, optimizing space and simplifying design.
4. Wide Voltage Range: Operates effectively within a broad range of supply voltages.
5. Thermal Performance: Designed with a robust thermal management capability to handle high currents.
6. Compact Package: Available in a surface-mount package, enhancing versatility in PCB layouts.
These features make the FDS9934C ideal for use in battery management systems, power supply circuits, and various consumer electronics applications.
Pinout
The pin functions are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the drain of the first MOSFET.
3. Source 1 (S1): Connects to the source of the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the drain of the second MOSFET.
6. Source 2 (S2): Connects to the source of the second MOSFET.
This device is commonly used in power management applications, including load switching and DC-DC converters, due to its low on-resistance and high-speed switching capabilities.
Manufacturer
Founded in 1957, Fairchild pioneered several key technologies in the semiconductor industry and has a long history of innovation. It has established itself as a reliable supplier of high-performance components, focused on delivering energy-efficient and high-quality solutions. The acquisition by ON Semiconductor in 2016 has expanded their capabilities and product offerings, strengthening their position in the global semiconductor market.