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FDG6301N

Name: FDG6301N
Rating: 4.8 (15 reviews)

+物料清單

MOSFET 2N-CH 25V 0.22A SC88

製造商安森美
製造商部分 #FDG6301N
有存貨7191

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規格

屬性	價值
Part Status	Obsolete
Base Product Number	FDG6301
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	220mA
Rds On (Max) @ Id, Vgs	4Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 10V
Power - Max	300mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88 (SC-70-6)
Packaging	Cut Tape (CT), Tape & Reel (TR)

概述

Description

FDG6301N is typically a course code used in academic settings, possibly referring to a specialized subject within a graduate or advanced study program. The specifics of the course, such as its focus, content, and prerequisites, can vary widely depending on the institution offering it. Generally, a course with such a code might delve into advanced topics in a specific field such as engineering, business, computer science, or another specialized discipline.
For a precise understanding, it's essential to consult the course catalog or syllabus provided by the institution, which would outline the course objectives, the main topics covered, assessment methods, and any required materials or textbooks. Often, such courses aim to build on foundational knowledge, offering deeper insights into the subject matter, promoting critical thinking, and enhancing practical skills in the field.
If FDG6301N is being discussed in a specific context or institution, referring to their official resources would provide the most accurate and relevant information.

Equivalent

The FDG6301N is a dual N-channel MOSFET commonly used for power management applications. Equivalent products include:
1. DMN62D0LDW from Diodes Incorporated
2. SI2312DS from Vishay
3. BSS138from Nexperia
4. 2N7002DW from ON Semiconductor
These alternatives may have slightly different specifications, so it's important to verify the parameters like maximum voltage, current, and R_DS(on) to ensure compatibility with your application.

Features

The FDG6301N is a N-channel MOSFET designed for various electronic applications. Key features include a low on-resistance, which ensures efficient current flow and reduces power loss. It has a maximum drain-source voltage (V_DS) of 20V and a continuous drain current of up to 1.6A, making it suitable for low to medium power applications. The device is also equipped with a high-speed switching capability, enhancing its performance in circuits requiring fast operation.
Additionally, it comes in a compact SOT-23 package, making it ideal for space-constrained applications. The FDG6301N is designed to provide a low gate threshold voltage, enabling it to be driven by low voltage levels from microcontrollers or other logic devices. Its robust thermal characteristics and reliability make it suitable for use in battery-operated devices, load switching, and power management tasks. Overall, the FDG6301N is valued for its efficiency, compact size, and reliability in various electronic circuits.

Pinout

The FDG6301N is a type of N-channel MOSFET. Typically, such components are packaged in a small form factor, for instance, a SOT-23 package, which generally includes three pins. Here’s a concise overview of its pin functions:
1. Gate (G): This pin is responsible for controlling the MOSFET. A voltage applied to the gate determines whether the MOSFET is in an on or off state, thus controlling the flow of current between the drain and source.
2. Drain (D): This pin is the output terminal for the MOSFET. When the device is turned on, current flows from the drain to the source.
3. Source (S): This pin acts as the input terminal. It is where the current enters the MOSFET before flowing to the drain when the MOSFET is on.
This configuration allows the FDG6301N to be used for switching and amplifying electronic signals in various applications. Always refer to the specific datasheet for precise characteristics and additional details.

Manufacturer

The FDG6301N is a MOSFET component manufactured by ON Semiconductor, a company known for producing a wide range of semiconductor solutions. ON Semiconductor is a leading provider of high-performance, energy-efficient, and innovative semiconductor-based solutions. They offer a comprehensive portfolio of products including power management, analog, sensors, logic, timing, connectivity, discrete, and custom devices.
ON Semiconductor serves a variety of markets including automotive, industrial, cloud power, and Internet of Things (IoT). The company focuses on delivering solutions that help design engineers solve their unique design challenges in these markets, emphasizing energy efficiency and sustainability. With a global presence, ON Semiconductor operates manufacturing, sales, and design centers around the world, aiming to drive technology advancements and provide solutions that enable smarter and more connected lives.

Application

The FDG6301N is a dual N-channel MOSFET commonly used in electronic applications requiring efficient switching and amplification. Its compact design and low on-resistance make it ideal for use in power management, DC-DC converters, and load switch applications. Additionally, it is often employed in battery-powered devices due to its low power consumption and high-speed operation. The FDG6301N can also be found in motor control systems, wireless communication devices, and LED drivers, where efficient voltage regulation and fast switching are critical. Its versatility makes it suitable for both consumer electronics and industrial applications.

Package

The FDG6301N is a MOSFET transistor typically packaged in a SuperSOT-6 configuration, which is a small, surface-mount package designed for efficient power handling and switching performance.

Frequently Asked Questions

Q: What is the maximum drain-to-source voltage for the FDG6301N?
A: The maximum Drain to Source Voltage (Vdss) is 25V, suitable for low-voltage logic-level switching applications.

Q: What is the maximum continuous drain current at 25°C?
A: The continuous drain current (Id) is rated at 220mA at 25°C, ideal for small-signal switching.

Q: Is this MOSFET suitable for battery-powered or portable devices?
A: Yes, with a logic-level gate threshold (Vgs(th) max 1.5V) and low gate charge (0.4nC), it is optimized for low-voltage drive and low-power applications.

Q: What package type does the FDG6301N use?
A: It comes in a 6-TSSOP (SC-88, SOT-363) surface-mount package, with the supplier device package being SC-88 (SC-70-6).

Q: What is the maximum power dissipation of this dual MOSFET?
A: The maximum power dissipation is 300mW, suitable for low-power, space-constrained designs.

Q: What is the typical input capacitance for switching speed estimation?
A: The input capacitance (Ciss) is 9.5pF at Vds=10V, indicating very fast switching for high-frequency low-current circuits.

Q: Can this be used in high-temperature environments?
A: Yes, the operating temperature range is -55°C to +150°C (TJ), making it reliable for harsh industrial or automotive environments.