規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 70mOhm @ 1.7A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 310 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
概述
Description
The FDN335N is an N-channel MOSFET from ON Semiconductor, designed for low-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 20V (VDSS)
- Current Rating: 2.6A (ID)
- Low On-Resistance: 50mΩ (typical at VGS = 4.5V)
- Fast Switching: Optimized for efficiency in power management, load switching, and DC-DC converters.
- Small Package: SOT-23 (compact and space-saving).
Ideal for portable electronics, battery-powered devices, and automotive systems where minimal power loss and compact size are critical. Always refer to the datasheet for detailed specs and application guidelines.
- Voltage Rating: 20V (VDSS)
- Current Rating: 2.6A (ID)
- Low On-Resistance: 50mΩ (typical at VGS = 4.5V)
- Fast Switching: Optimized for efficiency in power management, load switching, and DC-DC converters.
- Small Package: SOT-23 (compact and space-saving).
Ideal for portable electronics, battery-powered devices, and automotive systems where minimal power loss and compact size are critical. Always refer to the datasheet for detailed specs and application guidelines.
Equivalent
Equivalent products to the FDN335N (N-channel MOSFET) include:
- DMN3350LSD-7 (Diodes Inc.)
- BSS138 (Fairchild/ON Semi)
- 2N7002 (Various brands)
- NDS331N (Fairchild/ON Semi)
These offer similar specs (30V, 1.3A, SOT-23 package). Verify exact parameters for your application.
- DMN3350LSD-7 (Diodes Inc.)
- BSS138 (Fairchild/ON Semi)
- 2N7002 (Various brands)
- NDS331N (Fairchild/ON Semi)
These offer similar specs (30V, 1.3A, SOT-23 package). Verify exact parameters for your application.
Features
The FDN335N is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-to-Source, VDS)
- Current Rating: 2.6A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (at VGS = 10V)
- Gate Threshold Voltage: 1V (typical)
- Fast Switching: Low gate charge (QG = 4.3nC)
- Small Package: SOT-23 (3-pin), compact and space-saving
- Low Power Loss: Optimized for efficiency in switching applications
- Logic-Level Compatible: Can be driven by 3.3V or 5V signals
Ideal for low-voltage switching, power management, and portable electronics due to its small size and efficiency.
- Voltage Rating: 30V (Drain-to-Source, VDS)
- Current Rating: 2.6A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (at VGS = 10V)
- Gate Threshold Voltage: 1V (typical)
- Fast Switching: Low gate charge (QG = 4.3nC)
- Small Package: SOT-23 (3-pin), compact and space-saving
- Low Power Loss: Optimized for efficiency in switching applications
- Logic-Level Compatible: Can be driven by 3.3V or 5V signals
Ideal for low-voltage switching, power management, and portable electronics due to its small size and efficiency.
Pinout
The FDN335N is a SOT-23-3 (3-pin) N-channel MOSFET with the following pin functions:
1. Pin 1 (Gate - G): Controls the switching operation.
2. Pin 2 (Source - S): Connected to ground (or load return path).
3. Pin 3 (Drain - D): Connects to the load or power supply.
Key features:
- 30V drain-source voltage (VDS)
- 2.5A continuous drain current (ID)
- Low on-resistance (RDS(on) ~ 50mΩ @ 4.5V VGS)
- Logic-level gate drive (fully enhanced at 2.5V VGS)
Commonly used for load switching, power management, and DC-DC conversion in compact designs.
1. Pin 1 (Gate - G): Controls the switching operation.
2. Pin 2 (Source - S): Connected to ground (or load return path).
3. Pin 3 (Drain - D): Connects to the load or power supply.
Key features:
- 30V drain-source voltage (VDS)
- 2.5A continuous drain current (ID)
- Low on-resistance (RDS(on) ~ 50mΩ @ 4.5V VGS)
- Logic-level gate drive (fully enhanced at 2.5V VGS)
Commonly used for load switching, power management, and DC-DC conversion in compact designs.
Package
The FDN335N is a N-channel MOSFET available in a SOT-23-3 surface-mount package. This compact package is widely used for low-power applications, offering three pins (gate, drain, source) in a small footprint. It is suitable for space-constrained designs, such as portable electronics or power management circuits. The SOT-23-3 package ensures easy PCB assembly and efficient thermal performance.