規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 450 V |
| Current - Continuous Drain(Id) @ 25°C | 200mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 0V |
| Rds On(Max) @ Id Vgs | 20Ohm @ 150mA, 0V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 360 pF @ 25 V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-243AA (SOT-89) |
概述
Description
The DN3545N8-G is a N-channel enhancement-mode MOSFET designed for power management applications. Key features include:
- Low on-resistance (RDS(on)): Enhances efficiency and reduces power loss.
- High current handling: Suitable for switching and load control.
- Compact package (e.g., SOT-23, DFN): Ideal for space-constrained designs.
- Fast switching speed: Optimized for high-frequency circuits.
Common uses include DC-DC converters, motor drivers, and battery protection circuits. Check the datasheet for detailed specs like voltage/current ratings and thermal characteristics.
- Low on-resistance (RDS(on)): Enhances efficiency and reduces power loss.
- High current handling: Suitable for switching and load control.
- Compact package (e.g., SOT-23, DFN): Ideal for space-constrained designs.
- Fast switching speed: Optimized for high-frequency circuits.
Common uses include DC-DC converters, motor drivers, and battery protection circuits. Check the datasheet for detailed specs like voltage/current ratings and thermal characteristics.
Equivalent
Equivalent products to the DN3545N8-G (N-channel MOSFET) include:
- SI3545CDV-T1-GE3 (Vishay)
- DMN3010LSS-13 (Diodes Inc.)
- BSS138 (Fairchild/ON Semi)
- 2N7002 (Various brands)
These alternatives offer similar specs (30V, ~1A, SOT-23 package). Verify exact parameters (RDS(on), VGS(th)) for your application.
- SI3545CDV-T1-GE3 (Vishay)
- DMN3010LSS-13 (Diodes Inc.)
- BSS138 (Fairchild/ON Semi)
- 2N7002 (Various brands)
These alternatives offer similar specs (30V, ~1A, SOT-23 package). Verify exact parameters (RDS(on), VGS(th)) for your application.
Features
The DN3545N8-G is a N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 3.5mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency power applications
- Gate Charge (Qg): Low (typ. 18nC) for reduced switching losses
- Package: TO-252 (DPAK), surface-mount design
- Avalanche Energy Rated: Enhanced ruggedness
- Applications: Power management, DC-DC converters, motor control, and load switching
Designed for high current, low-loss performance, it’s ideal for compact, energy-efficient systems.
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 3.5mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency power applications
- Gate Charge (Qg): Low (typ. 18nC) for reduced switching losses
- Package: TO-252 (DPAK), surface-mount design
- Avalanche Energy Rated: Enhanced ruggedness
- Applications: Power management, DC-DC converters, motor control, and load switching
Designed for high current, low-loss performance, it’s ideal for compact, energy-efficient systems.
Application
The DN3545N8-G is a N-channel MOSFET commonly used in:
1. Power Management – Switching regulators, DC-DC converters.
2. Motor Control – Driving small motors in robotics and appliances.
3. Load Switching – Efficient power distribution in circuits.
4. LED Lighting – Driver circuits for brightness control.
5. Battery Protection – Overcurrent/overvoltage prevention in portable devices.
Its low on-resistance and high efficiency make it suitable for compact, energy-sensitive applications.
1. Power Management – Switching regulators, DC-DC converters.
2. Motor Control – Driving small motors in robotics and appliances.
3. Load Switching – Efficient power distribution in circuits.
4. LED Lighting – Driver circuits for brightness control.
5. Battery Protection – Overcurrent/overvoltage prevention in portable devices.
Its low on-resistance and high efficiency make it suitable for compact, energy-sensitive applications.
Package
The DN3545N8-G is a N-channel MOSFET typically available in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-power applications, and features a thermal pad for efficient heat dissipation. It is commonly used in power management circuits. For exact specifications, refer to the manufacturer's datasheet.
