規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 480mA (Tj) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.5Ohm @ 750mA, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 1mA |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 125 pF @ 25 V |
| PowerDissipation(Max) | 1.6W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-243AA (SOT-89) |
概述
Description
The TP2510N8-G is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances power efficiency by minimizing conduction losses.
- High Current Handling: Supports up to 30A continuous drain current (ID).
- Voltage Rating: 100V drain-to-source voltage (VDS), suitable for medium-power circuits.
- Fast Switching: Optimized for applications like DC-DC converters, motor control, and load switching.
- Compact Package: Comes in an TO-252 (DPAK) surface-mount package for space-saving PCB designs.
Common uses include power supplies, battery management, and automotive systems. Always refer to the datasheet for detailed specifications and thermal considerations.
- Low On-Resistance (RDS(on)): Enhances power efficiency by minimizing conduction losses.
- High Current Handling: Supports up to 30A continuous drain current (ID).
- Voltage Rating: 100V drain-to-source voltage (VDS), suitable for medium-power circuits.
- Fast Switching: Optimized for applications like DC-DC converters, motor control, and load switching.
- Compact Package: Comes in an TO-252 (DPAK) surface-mount package for space-saving PCB designs.
Common uses include power supplies, battery management, and automotive systems. Always refer to the datasheet for detailed specifications and thermal considerations.
Equivalent
The TP2510N8-G is a P-channel MOSFET. Equivalent alternatives include:
- SI2301DS (Vishay)
- AO3401A (Alpha & Omega)
- DMG2305UX (Diodes Inc.)
- IRLML6401 (Infineon)
These offer similar specs (e.g., -20V/-4.3A, SOT-23 package). Verify pinout and parameters for exact compatibility.
- SI2301DS (Vishay)
- AO3401A (Alpha & Omega)
- DMG2305UX (Diodes Inc.)
- IRLML6401 (Infineon)
These offer similar specs (e.g., -20V/-4.3A, SOT-23 package). Verify pinout and parameters for exact compatibility.
Features
The TP2510N8-G is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V (Drain-to-Source, VDSS)
- Current Rating: -5.3A (Continuous Drain Current, ID)
- Low On-Resistance: 51mΩ (max) at VGS = -4.5V
- Gate Threshold Voltage: -0.7V (typical)
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOP-8 (Compact surface-mount design)
- Applications: Power management, load switching, battery protection
Designed for efficiency in portable and low-voltage systems.
- Voltage Rating: -20V (Drain-to-Source, VDSS)
- Current Rating: -5.3A (Continuous Drain Current, ID)
- Low On-Resistance: 51mΩ (max) at VGS = -4.5V
- Gate Threshold Voltage: -0.7V (typical)
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOP-8 (Compact surface-mount design)
- Applications: Power management, load switching, battery protection
Designed for efficiency in portable and low-voltage systems.
Pinout
The TP2510N8-G is an 8-pin MOSFET in a DFN (2x2) package.
Pin Functions:
1. Pins 1, 2, 3, 4: Drain (D) – Connected internally for power handling.
2. Pin 5: Gate (G) – Controls the MOSFET switching.
3. Pins 6, 7, 8: Source (S) – Connected internally to ground/return path.
Key Features:
- N-channel MOSFET
- 30V drain-source voltage (VDS)
- 12A continuous drain current (ID)
- Low RDS(on) for efficient power switching.
Commonly used in power management, DC-DC converters, and load switching.
Pin Functions:
1. Pins 1, 2, 3, 4: Drain (D) – Connected internally for power handling.
2. Pin 5: Gate (G) – Controls the MOSFET switching.
3. Pins 6, 7, 8: Source (S) – Connected internally to ground/return path.
Key Features:
- N-channel MOSFET
- 30V drain-source voltage (VDS)
- 12A continuous drain current (ID)
- Low RDS(on) for efficient power switching.
Commonly used in power management, DC-DC converters, and load switching.
Package
The TP2510N8-G is a P-channel MOSFET typically available in a SOT-23-3 (TO-236AB) surface-mount package. This compact package is suitable for low-power applications, offering ease of PCB integration. Key specs include a -20V drain-source voltage and -4.3A continuous drain current. Check datasheets for exact dimensions and thermal characteristics.
