規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 380mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 10V |
| RdsOn(Max)@IdVgs | 2.8Ohm @ 250mA, 10V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.9 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 23.2 pF @ 25 V |
| PowerDissipation(Max) | 300mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-323 |
概述
Description
The DMN63D8LW-13 is a N-channel MOSFET designed for power switching applications. Key features include:
- Voltage Rating: 30V
- Current Rating: 63A (continuous)
- Low On-Resistance (RDS(on)): ~1.8mΩ (max) at VGS=10V
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor control, and load switching.
- Package: PowerDI® 5x6 (optimized for thermal performance).
Ideal for automotive, industrial, and consumer electronics where low power loss and compact size are critical.
- Voltage Rating: 30V
- Current Rating: 63A (continuous)
- Low On-Resistance (RDS(on)): ~1.8mΩ (max) at VGS=10V
- Fast Switching: Suitable for high-efficiency DC-DC converters, motor control, and load switching.
- Package: PowerDI® 5x6 (optimized for thermal performance).
Ideal for automotive, industrial, and consumer electronics where low power loss and compact size are critical.
Equivalent
Equivalent products to the DMN63D8LW-13 (a dual N-channel MOSFET) include:
- DMN63D8LDW-13 (similar specs, different package)
- SI2333DS-T1-GE3 (Vishay)
- DMN3010LSS-13 (Diodes Inc.)
- BSS138 (lower current, common alternative)
Check datasheets for exact compatibility in voltage, current, and package (SOT-363). For direct replacements, consult distributors like Digi-Key or Mouser.
- DMN63D8LDW-13 (similar specs, different package)
- SI2333DS-T1-GE3 (Vishay)
- DMN3010LSS-13 (Diodes Inc.)
- BSS138 (lower current, common alternative)
Check datasheets for exact compatibility in voltage, current, and package (SOT-363). For direct replacements, consult distributors like Digi-Key or Mouser.
Pinout
The DMN63D8LW-13 is a N-channel MOSFET with the following key specifications:
- Pin Count: 3 pins (Gate, Drain, Source in a SOT-23 package).
- Function: Designed for power switching in low-voltage applications (e.g., load switches, DC-DC converters).
- Key Parameters:
- VDS: 30V (Drain-Source voltage).
- ID: 6.3A (Continuous drain current).
- RDS(on): 13mΩ (Max at VGS = 10V).
It is optimized for high efficiency and low power loss in compact designs.
- Pin Count: 3 pins (Gate, Drain, Source in a SOT-23 package).
- Function: Designed for power switching in low-voltage applications (e.g., load switches, DC-DC converters).
- Key Parameters:
- VDS: 30V (Drain-Source voltage).
- ID: 6.3A (Continuous drain current).
- RDS(on): 13mΩ (Max at VGS = 10V).
It is optimized for high efficiency and low power loss in compact designs.
Application
The DMN63D8LW-13 is a high-performance N-channel MOSFET commonly used in:
1. Power Management – Efficient switching in DC-DC converters, voltage regulators, and power supplies.
2. Motor Control – Drives motors in automotive, robotics, and industrial applications.
3. LED Lighting – Controls current in LED drivers for stable illumination.
4. Battery Protection – Safeguards circuits in portable electronics and energy storage systems.
5. Load Switching – Enables fast on/off switching in electronic devices.
Its low on-resistance and high current capability make it ideal for energy-efficient and compact designs.
1. Power Management – Efficient switching in DC-DC converters, voltage regulators, and power supplies.
2. Motor Control – Drives motors in automotive, robotics, and industrial applications.
3. LED Lighting – Controls current in LED drivers for stable illumination.
4. Battery Protection – Safeguards circuits in portable electronics and energy storage systems.
5. Load Switching – Enables fast on/off switching in electronic devices.
Its low on-resistance and high current capability make it ideal for energy-efficient and compact designs.
