CSD13201W10

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CSD13201W10

+物料清單

MOSFET N-CH 12V 1.6A 4DSBGA

  • 製造商德州儀器

  • 製造商部分 #CSD13201W10

  • 包裹 DSBGA-4

  • 有存貨3026

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正品保證

規格

屬性 價值
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain(Id) @ 25°C 1.6A (Ta)
Drive Voltage(Max Rds On Min Rds On) 1.8V, 4.5V
Rds On(Max) @ Id Vgs 34mOhm @ 1A, 4.5V
Vgs(th)(Max) @ Id 1.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 2.9 nC @ 4.5 V
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 462 pF @ 6 V
Power Dissipation (Max) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DSBGA (1x1)

概述

Description

"Introduction to CSD13201W10" is likely a foundational course in computer science or software development, possibly focusing on programming, algorithms, or system design. The "W10" may indicate a winter term or week 10. Key topics could include:
- Programming Basics: Syntax, data structures, and problem-solving.
- Software Development: Principles like debugging, testing, and version control.
- Algorithms: Efficiency and common techniques (e.g., sorting, searching).
- Tools: IDEs, command-line interfaces, or collaborative platforms (e.g., GitHub).
The course may use languages like Python, Java, or C++. Check the syllabus for specifics on labs, projects, or assessments. Aimed at beginners, it builds core skills for advanced CS topics. For exact details, consult your institution’s course catalog or instructor.

Equivalent

The CSD13201W10 is a 20V, 1.8mΩ N-channel MOSFET by Texas Instruments. Equivalent alternatives include:
- Infineon BSC010NE2LS5 (20V, 1.0mΩ)
- ON Semiconductor NVTFS5C404NL (40V, 1.4mΩ)
- Vishay SiSS52DN (20V, 1.7mΩ)
- STMicroelectronics STL120N4LF6 (40V, 1.2mΩ)
Check datasheets for exact compatibility in your application.

Features

The CSD13201W10 is a 100V N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 13A (continuous)
- Low On-Resistance (RDS(on)): 40mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency applications
- Gate Charge (Qg): Low (typ. 8.5nC) for reduced switching losses
- Package: PowerPAK® SO-8 (compact, surface-mount design)
- Applications: Power supplies, motor control, DC-DC converters
Designed for high performance and efficiency, it offers low conduction and switching losses, making it suitable for power management in various electronic systems.

Pinout

The CSD13201W10 is a dual N-channel MOSFET in a WSON-10 package with 10 pins.
Key Functions:
- Dual N-channel MOSFETs (2 independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- Logic-level gate drive (compatible with 3.3V/5V control signals).
- Thermally enhanced package for improved heat dissipation.
Pinout Highlights:
- Pins 1, 3, 6, 8: Gate terminals (G1, G2).
- Pins 2, 4, 7, 9: Drain terminals (D1, D2).
- Pins 5, 10: Source terminals (S1, S2).
Commonly used in power management, DC-DC converters, and load switching.

Application

The CSD13201W10 is a Schottky diode commonly used in:
1. Power Management – Efficient rectification in DC-DC converters, voltage clamping, and reverse polarity protection.
2. Switching Circuits – Fast switching in high-frequency applications like SMPS (Switched-Mode Power Supplies).
3. Portable Electronics – Low forward voltage drop benefits battery-powered devices (e.g., smartphones, wearables).
4. Automotive Systems – Used in LED drivers, infotainment, and power distribution.
5. Solar Energy – Prevents reverse current in solar panels and charge controllers.
Its low leakage and high efficiency make it ideal for energy-sensitive applications.

Package

The CSD13201W10 is a 10V, 20A N-channel MOSFET in a WSON-8 package (3mm x 3mm). It features a small footprint, low on-resistance (RDS(on)), and is designed for high-efficiency power applications like DC-DC converters. The WSON-8 package offers good thermal performance with an exposed pad for heat dissipation.

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