C2M0280120D

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C2M0280120D

+物料清單

SICFET N-CH 1200V 10A TO247-3

  • 製造商Wolfspeed,股份有限公司。

  • 製造商部分 #C2M0280120D

  • 數據表 C2M0280120D DataSheet

  • 有存貨5790

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規格

屬性 價值
Series Z-FET™
Part Status Obsolete
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 20.4 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 259 pF @ 1000 V
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number C2M0280120

概述

Description

C2M0280120D appears to be a specific model or code that could relate to a variety of contexts, such as electronics, machinery, or a specific product line. Without additional context, it's challenging to provide a precise introduction.
In general, codes like C2M0280120D might represent a technical component, such as a semiconductor or electronic device, often used in circuit design or manufacturing. These identifiers usually contain information about specifications, such as voltage ratings, size, or compatibility with other components.
If you have a specific field or application in mind (e.g., consumer electronics, automotive parts, etc.), please provide more details for a more tailored response.

Equivalent

The C2M0280120D chip is a 1200V, 28A MOSFET typically used in power applications. Equivalent products include the Infineon IKW40N120H3, STMicroelectronics STP40NF120, and ON Semiconductor NTP40N120. Always verify specifications like R_DS(on), gate charge, and thermal characteristics when considering alternatives.

Features

The C2M0280120D is a high-performance silicon carbide (SiC) MOSFET designed for efficient power conversion applications. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Low On-Resistance: Offers low R_DS(on), enabling reduced conduction losses and improving efficiency.
3. High-Speed Switching: Capable of fast switching speeds, which enhances system performance and reduces heat generation.
4. Thermal Performance: Excellent thermal conductivity allows for effective heat dissipation, improving reliability in demanding environments.
5. Robustness: High ruggedness with capable performance under harsh conditions, suitable for industrial applications.
6. Gate Drive Voltage: Compatible with standard gate drive voltages, simplifying integration into existing designs.
7. Low Gate Charge: Lower gate charge minimizes drive losses and improves switching efficiency.
Overall, the C2M0280120D is ideal for applications such as power supplies, motor drives, and renewable energy systems due to its combination of high efficiency and reliability.

Pinout

The C2M0280120D is a silicon carbide (SiC) MOSFET used in power electronics applications. It features a total of 6 pins. The primary functions of these pins are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied here turns the MOSFET on or off.
2. Drain (D): This pin connects to the output load and is where the current flows out of the device when it is on.
3. Source (S): This pin serves as the return path for the current, connecting to ground or the negative side of the power supply.
Additionally, there may be a thermal pad or mounting features on the package for heat dissipation, but the primary pins relevant for operation are the gate, drain, and source. The C2M0280120D is designed for high-efficiency applications in electric vehicles, renewable energy systems, and industrial motor drives.

Manufacturer

The C2M0280120D is manufactured by CREE, Inc., a leading company in the semiconductor industry, particularly known for its innovation in silicon carbide (SiC) technology. CREE, now known as Wolfspeed, focuses on the development and production of advanced power and radio frequency (RF) solutions, primarily utilizing wide-bandgap semiconductor materials.
Wolfspeed specializes in high-efficiency power devices, such as MOSFETs and diodes, which are crucial for applications in electric vehicles, renewable energy, and industrial power systems. The C2M0280120D is a SiC MOSFET designed for high-performance applications, offering benefits like reduced energy loss, enhanced thermal performance, and improved reliability compared to traditional silicon-based devices.
As a pioneer in the field, Wolfspeed plays a significant role in advancing the adoption of SiC technology across various industries, contributing to more sustainable and efficient solutions for modern electronic systems. The company’s commitment to research and development positions it at the forefront of the semiconductor market.

Application

C2M0280120D is typically used in applications such as power management, motor control, and LED lighting. It is designed for high-efficiency performance in DC-DC converters, electronic ballast systems, and battery management systems. This device is also suitable for consumer electronics, automotive applications, and industrial equipment where precise voltage regulation and energy efficiency are essential. Its compact design and reliability make it ideal for use in portable devices and applications requiring space-saving solutions.

Package

The C2M0280120D is packaged in a TO-220 form factor. This type of package is commonly used for power semiconductors, providing good thermal performance and ease of mounting on heatsinks for effective heat dissipation.

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