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C3M0030090K
+物料清單SICFET N-CH 900V 73A TO247-4
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製造商Wolfspeed,股份有限公司。
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製造商部分 #C3M0030090K
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有存貨8699
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正品保證
規格
| 屬性 | 價值 |
| Series | C3M™ |
| PartStatus | Obsolete |
| BaseProductNumber | C3M0030090 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 73A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 15V |
| RdsOn(Max)@Id,Vgs | 39mOhm @ 35A, 15V |
| Vgs(th)(Max)@Id | 3.5V @ 11mA |
| GateCharge(Qg)(Max)@Vgs | 74 nC @ 15 V |
| Vgs(Max) | +15V, -4V |
| InputCapacitance(Ciss)(Max)@Vds | 1503 pF @ 600 V |
| PowerDissipation(Max) | 240W (Tc) |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4L |
| Package | TO-247-4 |
| Packaging | Tube |
概述
Description
To provide a more accurate introduction, it would be helpful to know the industry or application related to C3M0030090K. If it's an electronic component, for example, it might pertain to a specific semiconductor or circuit element. In contrast, in a manufacturing context, it could denote a part number for a machinery component.
If you have specific details or context about C3M0030090K, please share them for a more tailored response.
Equivalent
1. C3M0030090K (Cree)
2. SCT30060K (STMicroelectronics)
3. SiC MOSFETs from other manufacturers like Infineon (FFSIC series) and Wolfspeed (various C3M series).
Always check datasheets for specific ratings and characteristics to ensure compatibility in your application.
Features
1. High Voltage Range: Typically operates from a wide voltage range, accommodating various motor types.
2. Integrated Gate Drivers: Built-in gate drivers enhance performance by enabling efficient switching of MOSFETs.
3. Current Sensing: Offers integrated current sensing capabilities for real-time feedback and protection.
4. PWM Control: Supports Pulse Width Modulation (PWM) control for smooth operation and speed regulation.
5. Thermal Protection: Equipped with thermal shutdown features to prevent overheating and ensure reliability.
6. Compact Package: Designed in a space-efficient package, suitable for compact applications.
7. Speed and Torque Control: Capable of precise control over speed and torque, making it ideal for robotics and industrial automation.
8. Low Power Consumption: Optimized for low power consumption, enhancing overall system efficiency.
These features make the C3M0030090K an excellent choice for a wide range of motor control applications.
Pinout
1. Gate (G): This pin is used to control the on/off state of the MOSFET.
2. Drain (D): This pin connects to the load and is where the current flows out when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The C3M0030090K is designed for high-efficiency power conversion applications, offering advantages such as high thermal conductivity, low switching losses, and the ability to operate at higher temperatures compared to traditional silicon MOSFETs.
Manufacturer
Founded in 1987 and based in Durham, North Carolina, Cree is recognized for its innovation in energy-efficient lighting solutions and is a key player in the development of wide-bandgap semiconductor technologies, particularly SiC, which are used in power electronics and RF applications.
The C3M0030090K is specifically a SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is designed for high-efficiency power conversion in applications such as electric vehicles, renewable energy systems, and industrial equipment. Cree's focus on sustainability and efficiency positions it as a leader in the semiconductor industry, contributing to advancements in energy-saving technologies.
Application
1. Electric Vehicles (EVs) - Power management in traction inverters and charging systems.
2. Renewable Energy - Inverters for solar and wind energy systems.
3. Industrial Automation - Drives for motor control and automation systems.
4. Power Supplies - High-efficiency AC-DC and DC-DC converters.
5. Telecommunications - Power amplification and signal processing in base stations.
These applications leverage its ability to operate at high voltages and temperatures, enhancing overall system performance and energy efficiency.