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規格
| 屬性 | 價值 |
| Manufacturer | Infineon Technologies |
| Package / Case | TSDSON-8(3.3x3.3) |
| Operating Temperature | -55℃~+150℃ |
| Rds(on) | 9.7mΩ@10V,20A |
| Drain to Source Voltage (Vdss) | 40V |
| Pd - Power Dissipation | 35W |
| Current - Continuous Drain(Id) | 40A |
| Reverse Transfer Capacitance (Crss @ Vds) | 16pF |
| Gate Threshold Voltage (Vgs(th) @ Id) | 2V |
| Gate Charge(Qg) | 24nC@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.9nF |
概述
Description
BSZ097N04LSG is a product or component designation that may refer to a specific model or type of electronic device, often found in the context of semiconductors or power management solutions. While specific details about BSZ097N04LSG might vary, components with similar designations typically serve in applications such as voltage regulation, switching power supplies, or other electronic systems requiring efficient power management.
This designation often includes information such as the manufacturer's code, product type, and specifications related to performance, like voltage ratings and current handling capabilities. When looking for more detailed specifications, such as datasheets, it is advisable to consult the manufacturer's website or product documentation for in-depth information on electrical characteristics, packaging, and application guidelines.
This designation often includes information such as the manufacturer's code, product type, and specifications related to performance, like voltage ratings and current handling capabilities. When looking for more detailed specifications, such as datasheets, it is advisable to consult the manufacturer's website or product documentation for in-depth information on electrical characteristics, packaging, and application guidelines.
Equivalent
The BSZ097N04LSG is a MOSFET from Infineon with a 40V, 97A rating. Equivalent products include the IRF3205 from Infineon, the FDS6675 from ON Semiconductor, and the STP75NF75 from STMicroelectronics. However, always verify specifications like RDS(on) and package type for compatibility in your specific application.
Features
The BSZ097N04LSG is a N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, making it suitable for medium-voltage applications.
2. Current Rating: With a continuous drain current (ID) rating of 97A, it can handle substantial load requirements.
3. RDS(on): The on-resistance is low, typically around 4.5 mΩ, which minimizes power loss and improves efficiency during operation.
4. Gate-Source Voltage: It supports a gate-source voltage (VGS) of ±20V, allowing for easy interfacing with standard control circuits.
5. Package Type: Available in a TO-220 package, it provides good thermal performance and ease of mounting.
6. Fast Switching: The MOSFET is optimized for fast switching applications, enhancing performance in high-frequency circuits.
Overall, the BSZ097N04LSG is ideal for power supply circuits, motor drives, and other high-current applications.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, making it suitable for medium-voltage applications.
2. Current Rating: With a continuous drain current (ID) rating of 97A, it can handle substantial load requirements.
3. RDS(on): The on-resistance is low, typically around 4.5 mΩ, which minimizes power loss and improves efficiency during operation.
4. Gate-Source Voltage: It supports a gate-source voltage (VGS) of ±20V, allowing for easy interfacing with standard control circuits.
5. Package Type: Available in a TO-220 package, it provides good thermal performance and ease of mounting.
6. Fast Switching: The MOSFET is optimized for fast switching applications, enhancing performance in high-frequency circuits.
Overall, the BSZ097N04LSG is ideal for power supply circuits, motor drives, and other high-current applications.
Pinout
The BSZ097N04LSG is a N-channel MOSFET with a total of 4 pins. Its pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here relative to the source pin determines whether the device is on or off.
2. Drain (D): This pin connects to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or negative voltage in a typical configuration. It completes the circuit for current flow.
4. Body Diode (not a dedicated pin): The device includes an intrinsic body diode between the source and drain, allowing current to flow in the reverse direction when necessary.
The BSZ097N04LSG is commonly used in power applications due to its low on-resistance and high efficiency.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here relative to the source pin determines whether the device is on or off.
2. Drain (D): This pin connects to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or negative voltage in a typical configuration. It completes the circuit for current flow.
4. Body Diode (not a dedicated pin): The device includes an intrinsic body diode between the source and drain, allowing current to flow in the reverse direction when necessary.
The BSZ097N04LSG is commonly used in power applications due to its low on-resistance and high efficiency.
Manufacturer
The BSZ097N04LSG is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in essential semiconductor components and is known for its production of discrete devices, logic devices, and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors).
Founded in 2017 as a spin-off from NXP Semiconductors, Nexperia focuses on high-volume manufacturing and quality assurance, providing products that cater to a wide range of applications in automotive, industrial, consumer, and communications sectors. The company emphasizes reliability and efficiency in semiconductor solutions, ensuring that its components meet stringent industry standards.
Nexperia operates globally, with manufacturing facilities and design centers in various locations, enabling it to serve a diverse customer base and support a broad array of electronic applications.
Founded in 2017 as a spin-off from NXP Semiconductors, Nexperia focuses on high-volume manufacturing and quality assurance, providing products that cater to a wide range of applications in automotive, industrial, consumer, and communications sectors. The company emphasizes reliability and efficiency in semiconductor solutions, ensuring that its components meet stringent industry standards.
Nexperia operates globally, with manufacturing facilities and design centers in various locations, enabling it to serve a diverse customer base and support a broad array of electronic applications.
Application
The BSZ097N04LSG is a power MOSFET designed for various applications in power management. Its key application areas include:
1. DC-DC Converters: Used in step-down or boost converters for efficient voltage regulation.
2. Power Supply Units: Ideal for switch-mode power supplies (SMPS) due to its low on-resistance and high efficiency.
3. Motor Drives: Suitable for driving motors in industrial applications and electric vehicles.
4. LED Drivers: Employed in power regulation for LED lighting systems.
5. Battery Management Systems: Utilized in charging and discharging circuits for lithium-ion batteries.
Its characteristics make it well-suited for high-frequency and high-efficiency applications.
1. DC-DC Converters: Used in step-down or boost converters for efficient voltage regulation.
2. Power Supply Units: Ideal for switch-mode power supplies (SMPS) due to its low on-resistance and high efficiency.
3. Motor Drives: Suitable for driving motors in industrial applications and electric vehicles.
4. LED Drivers: Employed in power regulation for LED lighting systems.
5. Battery Management Systems: Utilized in charging and discharging circuits for lithium-ion batteries.
Its characteristics make it well-suited for high-frequency and high-efficiency applications.
Package
The package type of BSZ097N04LSG is a TO-220, which is a standard packaging format for power semiconductor devices, providing good thermal performance and ease of mounting.
