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規格
| 屬性 | 價值 |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 5000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Type | SMD/SMT |
| Package / Case | TSDSON-8 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 40 A |
| Rds On | 3.4 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 25 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 52 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 3 ns |
| Height | 1.1 mm |
| Length | 3.3 mm |
| Rise Time | 4 ns |
| Series | OptiMOS 5 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 19 ns |
| Typical Turn - On Delay Time | 4 ns |
| Width | 3.3 mm |
| Part # Aliases | SP001067020 BSZ034N04LSATMA1 |
| Unit Weight | 0.001367 oz |
| Forward Transconductance - Min | 46 S |
概述
Description
BSZ034N04LS is a high-performance N-channel MOSFET designed for power management applications. It features low on-resistance, high-speed switching, and robust thermal performance, making it suitable for use in various applications such as DC-DC converters, motor drives, and power supply circuits.
Key specifications often include a maximum drain-source voltage (V_DS) of around 40V, a continuous drain current (I_D) rating that can reach 34A, and a low R_DS(on) value, which enhances efficiency and reduces heat generation during operation. The MOSFET is typically housed in a TO-220 or similar package, facilitating effective heat dissipation.
This component is popular in automotive, consumer electronics, and industrial sectors due to its reliability and performance. Proper thermal management and circuit design are crucial to fully leverage its capabilities and ensure optimal operation in demanding environments.
Key specifications often include a maximum drain-source voltage (V_DS) of around 40V, a continuous drain current (I_D) rating that can reach 34A, and a low R_DS(on) value, which enhances efficiency and reduces heat generation during operation. The MOSFET is typically housed in a TO-220 or similar package, facilitating effective heat dissipation.
This component is popular in automotive, consumer electronics, and industrial sectors due to its reliability and performance. Proper thermal management and circuit design are crucial to fully leverage its capabilities and ensure optimal operation in demanding environments.
Equivalent
The BSZ034N04LS is a N-channel MOSFET often used in power applications. Equivalent products include the IRF3205, STP75NF75, and FDS6678. Always check the datasheets for specific parameters such as voltage, current ratings, and RDS(on) to ensure compatibility for your application.
Features
The BSZ034N04LS is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Current Handling: With a continuous drain current (I_D) rating of 34A at a case temperature of 25°C, it can effectively handle high loads.
3. Low R_DS(on): The device boasts a low on-resistance of approximately 4.5 mΩ, ensuring minimal power loss and heat generation during operation.
4. Fast Switching: Optimized for fast switching speeds, making it ideal for applications like DC-DC converters and motor drives.
5. Package Type: Typically available in a TO-220 or similar package, facilitating easy thermal management and mounting.
6. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) ranging from 1V to 3V, allowing for efficient control with lower gate drive voltages.
These features make the BSZ034N04LS a versatile choice in power electronics and energy-efficient designs.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Current Handling: With a continuous drain current (I_D) rating of 34A at a case temperature of 25°C, it can effectively handle high loads.
3. Low R_DS(on): The device boasts a low on-resistance of approximately 4.5 mΩ, ensuring minimal power loss and heat generation during operation.
4. Fast Switching: Optimized for fast switching speeds, making it ideal for applications like DC-DC converters and motor drives.
5. Package Type: Typically available in a TO-220 or similar package, facilitating easy thermal management and mounting.
6. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) ranging from 1V to 3V, allowing for efficient control with lower gate drive voltages.
These features make the BSZ034N04LS a versatile choice in power electronics and energy-efficient designs.
Pinout
The BSZ034N04LS is a N-channel MOSFET with a total of 5 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here turns the device on.
2. Drain (D): This pin is where the main current flows out when the device is on.
3. Source (S): This pin connects to the ground or load and completes the circuit.
4. Body Diode: Internally connects from Drain to Source, allowing current to flow in reverse, important for specific applications.
5. Tab (Thermal pad): Used for heat dissipation, it may also be connected to the Source.
This MOSFET is designed for low on-resistance and high-speed switching applications, making it suitable for power management in various electronic circuits.
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here turns the device on.
2. Drain (D): This pin is where the main current flows out when the device is on.
3. Source (S): This pin connects to the ground or load and completes the circuit.
4. Body Diode: Internally connects from Drain to Source, allowing current to flow in reverse, important for specific applications.
5. Tab (Thermal pad): Used for heat dissipation, it may also be connected to the Source.
This MOSFET is designed for low on-resistance and high-speed switching applications, making it suitable for power management in various electronic circuits.
Manufacturer
The BSZ034N04LS is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia. Nexperia is a global semiconductor company that specializes in discrete, logic, and MOSFET devices. It was formed in 2017 as a spin-off from NXP Semiconductors and focuses on providing high-quality semiconductor products for a wide range of applications, including automotive, industrial, and consumer electronics. The company is known for its commitment to reliability and efficiency in its product offerings. Nexperia operates on a global scale, with manufacturing facilities and sales offices in various locations around the world.
Application
The BSZ034N04LS is a N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: Utilized in switching power supplies for efficient voltage regulation.
2. Motor Control: Serves in driving motors within automotive and industrial systems.
3. Power Management ICs: Employed in battery management systems for efficient power distribution.
4. Switching Applications: Suitable for high-frequency switching in various power electronics.
5. LED Drivers: Used in circuits for controlling LED lighting systems.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.
1. DC-DC Converters: Utilized in switching power supplies for efficient voltage regulation.
2. Motor Control: Serves in driving motors within automotive and industrial systems.
3. Power Management ICs: Employed in battery management systems for efficient power distribution.
4. Switching Applications: Suitable for high-frequency switching in various power electronics.
5. LED Drivers: Used in circuits for controlling LED lighting systems.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications.
Package
The BSZ034N04LS is packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used for power transistors and MOSFETs in various electronic applications.