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BSS214N H6327
+物料清單MOSFETs N-Ch 20V 1.5A SOT-23-3
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製造商英飛淩科技
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製造商部分 #BSS214N H6327
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有存貨18622
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規格
| 屬性 | 價值 |
| Packaging | MouseReel |
| Standard Pack Qty | 3000 |
概述
Description
"BSS214N H6327" appears to be a specific part number, likely for a semiconductor component such as a MOSFET or transistor. The prefix "BSS" suggests it's from Infineon Technologies or a similar manufacturer, often used in power switching applications. The "H6327" may indicate a batch or packaging code.
Key features (if a MOSFET):
- Type: N-channel
- Voltage/Current Ratings: Typically low to medium (e.g., 20V, 1–3A)
- Package: Likely SMD (e.g., SOT-23)
For precise details, consult the datasheet using the full part number, as variations exist. Common applications include load switching, amplification, or signal processing in compact electronics.
Key features (if a MOSFET):
- Type: N-channel
- Voltage/Current Ratings: Typically low to medium (e.g., 20V, 1–3A)
- Package: Likely SMD (e.g., SOT-23)
For precise details, consult the datasheet using the full part number, as variations exist. Common applications include load switching, amplification, or signal processing in compact electronics.
Features
The BSS214NH6327 is an N-channel MOSFET with the following key features:
- Voltage Rating: 20V (Drain-Source)
- Current Rating: 4.3A (Continuous Drain Current)
- Low On-Resistance: 28mΩ (max at VGS=4.5V)
- Gate Threshold Voltage: 0.7V (typical)
- Fast Switching: Low gate charge (9nC) for efficient performance
- Package: SOT-23 (small form factor, suitable for compact designs)
- Logic-Level Compatible: Fully enhanced at VGS=2.5V
- Low Power Loss: Optimized for power management in portable devices
Ideal for DC-DC converters, load switches, and battery protection circuits.
- Voltage Rating: 20V (Drain-Source)
- Current Rating: 4.3A (Continuous Drain Current)
- Low On-Resistance: 28mΩ (max at VGS=4.5V)
- Gate Threshold Voltage: 0.7V (typical)
- Fast Switching: Low gate charge (9nC) for efficient performance
- Package: SOT-23 (small form factor, suitable for compact designs)
- Logic-Level Compatible: Fully enhanced at VGS=2.5V
- Low Power Loss: Optimized for power management in portable devices
Ideal for DC-DC converters, load switches, and battery protection circuits.
Pinout
The BSS214N H6327 is a P-channel MOSFET with 3 pins (SOT-23 package).
Pin Functions:
1. Gate (G): Controls the MOSFET's conductivity.
2. Source (S): Connected to the power supply (higher voltage for P-channel).
3. Drain (D): Connects to the load.
Key Features:
- -20V drain-source voltage (VDS).
- -3.3A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient switching.
Commonly used in power switching, load control, and battery management.
Pin Functions:
1. Gate (G): Controls the MOSFET's conductivity.
2. Source (S): Connected to the power supply (higher voltage for P-channel).
3. Drain (D): Connects to the load.
Key Features:
- -20V drain-source voltage (VDS).
- -3.3A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient switching.
Commonly used in power switching, load control, and battery management.
Package
The BSS214N H6327 is a SOT-23 packaged N-channel MOSFET. This small surface-mount package is widely used for low-power applications, offering compact size and efficient performance. The "H6327" suffix typically denotes specific manufacturer variations or tape-and-reel packaging for automated assembly.
