規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SIPMOS® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 240 V |
| Current-ContinuousDrain(Id)@25°C | 110mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 14Ohm @ 100mA, 10V |
| Vgs(th)(Max)@Id | 1.8V @ 56µA |
| GateCharge(Qg)(Max)@Vgs | 3.1 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 77 pF @ 25 V |
| PowerDissipation(Max) | 360mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-SOT23 |
概述
Description
The BSS131H6327XTSA1 is a N-channel MOSFET from Infineon Technologies, designed for low-voltage, high-efficiency switching applications. Key features include:
- Low threshold voltage (VGS(th) ~1V), ideal for battery-powered devices.
- Low on-resistance (RDS(on) ~0.28Ω at VGS=4.5V), minimizing power loss.
- Compact SOT-23 package, suitable for space-constrained designs.
- Fast switching speeds, enhancing performance in DC-DC converters, load switches, and power management circuits.
Typical applications include portable electronics, IoT devices, and power distribution systems. Its 20V drain-source voltage (VDS) and 1.7A continuous drain current make it versatile for low-power designs.
For detailed specs, refer to the Infineon datasheet.
- Low threshold voltage (VGS(th) ~1V), ideal for battery-powered devices.
- Low on-resistance (RDS(on) ~0.28Ω at VGS=4.5V), minimizing power loss.
- Compact SOT-23 package, suitable for space-constrained designs.
- Fast switching speeds, enhancing performance in DC-DC converters, load switches, and power management circuits.
Typical applications include portable electronics, IoT devices, and power distribution systems. Its 20V drain-source voltage (VDS) and 1.7A continuous drain current make it versatile for low-power designs.
For detailed specs, refer to the Infineon datasheet.
Equivalent
Equivalent products to the BSS131H6327XTSA1 (N-channel MOSFET, 60V, 0.17A, SOT-23) include:
- DMN1019USN-7 (Diodes Inc)
- 2N7002DW (On Semi, dual MOSFET)
- BS138 (Fairchild, higher current)
- NDS351AN (On Semi, similar specs)
Check datasheets for exact compatibility in your circuit.
- DMN1019USN-7 (Diodes Inc)
- 2N7002DW (On Semi, dual MOSFET)
- BS138 (Fairchild, higher current)
- NDS351AN (On Semi, similar specs)
Check datasheets for exact compatibility in your circuit.
Features
The BSS131H6327XTSA1 is an N-channel MOSFET with the following key features:
- Low Threshold Voltage (VGS(th)): Typically 1.3V, suitable for low-voltage applications.
- Low On-Resistance (RDS(on)): 0.6Ω max at VGS = 4.5V, ensuring efficient power handling.
- Small Package (SOT-23): Compact and ideal for space-constrained designs.
- Fast Switching: Optimized for high-speed applications.
- Low Gate Charge (Qg): Enhances switching efficiency.
- Voltage Rating: 20V drain-source (VDS), 12V gate-source (VGS).
- Low Power Loss: Improves energy efficiency in portable and battery-powered devices.
Commonly used in load switching, power management, and DC-DC converters.
- Low Threshold Voltage (VGS(th)): Typically 1.3V, suitable for low-voltage applications.
- Low On-Resistance (RDS(on)): 0.6Ω max at VGS = 4.5V, ensuring efficient power handling.
- Small Package (SOT-23): Compact and ideal for space-constrained designs.
- Fast Switching: Optimized for high-speed applications.
- Low Gate Charge (Qg): Enhances switching efficiency.
- Voltage Rating: 20V drain-source (VDS), 12V gate-source (VGS).
- Low Power Loss: Improves energy efficiency in portable and battery-powered devices.
Commonly used in load switching, power management, and DC-DC converters.
Pinout
The BSS131H6327XTSA1 is a N-channel MOSFET in a SOT-23 package with 3 pins (Gate, Drain, Source).
Key Functions:
- Gate (Pin 1): Controls the switching.
- Drain (Pin 2): Connects to the load.
- Source (Pin 3): Ground/reference.
Features:
- Low threshold voltage (suitable for small-signal applications).
- Low on-resistance (RDS(on)) for efficient switching.
- 60V drain-source voltage (VDS) rating.
Commonly used in load switching, power management, and signal amplification.
Key Functions:
- Gate (Pin 1): Controls the switching.
- Drain (Pin 2): Connects to the load.
- Source (Pin 3): Ground/reference.
Features:
- Low threshold voltage (suitable for small-signal applications).
- Low on-resistance (RDS(on)) for efficient switching.
- 60V drain-source voltage (VDS) rating.
Commonly used in load switching, power management, and signal amplification.
Manufacturer
The BSS131H6327XTSA1 is a N-channel MOSFET manufactured by Infineon Technologies, a leading German semiconductor company.
Infineon Technologies specializes in power semiconductors, microcontrollers, and security solutions for automotive, industrial, and IoT applications. Known for high-quality components, Infineon is a key player in energy efficiency and connectivity technologies.
The BSS131H6327XTSA1 is part of their OptiMOS™ family, designed for low-voltage, high-efficiency applications.
Infineon Technologies specializes in power semiconductors, microcontrollers, and security solutions for automotive, industrial, and IoT applications. Known for high-quality components, Infineon is a key player in energy efficiency and connectivity technologies.
The BSS131H6327XTSA1 is part of their OptiMOS™ family, designed for low-voltage, high-efficiency applications.
Application
The BSS131H6327XTSA1 is a small-signal N-channel MOSFET used in various low-power applications. Key areas include:
- Portable Electronics: Power management in smartphones, tablets, and wearables.
- Signal Switching: Low-voltage switching in audio and RF circuits.
- Load Control: Driving small relays, LEDs, and sensors.
- Battery-Powered Devices: Efficient power distribution in IoT and wireless devices.
- Automotive Electronics: Secondary control circuits in infotainment and lighting systems.
Its compact SOT-23 package and low threshold voltage make it ideal for space-constrained, energy-efficient designs.
- Portable Electronics: Power management in smartphones, tablets, and wearables.
- Signal Switching: Low-voltage switching in audio and RF circuits.
- Load Control: Driving small relays, LEDs, and sensors.
- Battery-Powered Devices: Efficient power distribution in IoT and wireless devices.
- Automotive Electronics: Secondary control circuits in infotainment and lighting systems.
Its compact SOT-23 package and low threshold voltage make it ideal for space-constrained, energy-efficient designs.
