Part A
BSS131H6327XTSA1
英飛淩科技
- Lifecycle
- Active
- Stock
- 6216 件
- Package
- SOT-23-3
- Series
- 電晶體-FET、MOSFET-單
Replacement verdict
Compatible functional replacement candidate
The BSS131H6327XTSA1 is a functional replacement candidate for the BSS138LT1G in low-side switching and level-shifting applications, provided the higher drain-source voltage rating and different package footprint are validated against the target design. Both devices are N-channel logic-level MOSFETs with comparable on-resistance and gate threshold characteristics, but the BSS131H6327XTSA1 offers a significantly higher VDS rating and a different package style, so layout and thermal considerations must be reviewed before substitution.
Channel Type
High match
Drain-Source Voltage Rating
High match
Package Type
Validation required
Continuous Drain Current
Validation required
Parts at a glance
Part B
BSS138LT1G
安森美
- Lifecycle
- Active
- Stock
- 2952 件
- Package
- SOT-23-3
- Series
- 電晶體-FET、MOSFET-單
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | BSS138LT1G | BSS131H6327XTSA1 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 50 V | 240 V | Higher Vds rating allows the BSS131H6327XTSA1 to be used in higher-voltage circuits, while the BSS138LT1G is limited to low-voltage applications. |
| Continuous Drain Current (Id) | 200 mA | 100 mA | The BSS138LT1G can handle higher continuous current, making it more suitable for driving heavier loads within its voltage range. |
| Drain-Source On-Resistance (Rds(on)) | 3.5 Ω @ Vgs=10V, Id=200mA | 14 Ω @ Vgs=10V, Id=100mA | Lower Rds(on) reduces conduction losses and voltage drop, improving efficiency in switching and load-driving applications. |
| Gate-Source Voltage (Vgs) Max | ±20 V | ±20 V | Both devices tolerate the same maximum gate drive voltage, so gate-drive design constraints are similar. |
| Gate Threshold Voltage (Vgs(th)) | 0.8 V to 1.5 V | 1.0 V to 2.0 V | Threshold voltage determines the minimum gate voltage needed to turn the device on; differences affect compatibility with low-voltage logic levels. |
| Power Dissipation (Pd) | 225 mW | 360 mW | Higher power dissipation capability allows the BSS131H6327XTSA1 to handle more thermal load without overheating. |
| Input Capacitance (Ciss) | 27 pF | 70 pF | Lower input capacitance enables faster switching and reduces drive current requirements, favoring the BSS138LT1G in high-speed applications. |
| Package / Mounting | SOT-23 (TO-236) Surface Mount | SOT-23 (TO-236) Surface Mount | Identical package and mounting style allow direct PCB footprint compatibility between the two devices. |
| Channel Type | N-Channel | N-Channel | Both are N-channel MOSFETs, so they share the same polarity and basic drive requirements in circuit design. |
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Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | BSS131H6327XTSA1 | BSS138LT1G |
|---|---|---|
| Series | SIPMOS® | - |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 240 V | 50 V |
| Current - Continuous Drain(Id) @ 25°C | 110mA (Ta) | 200mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 5V |
| Rds On(Max) @ Id Vgs | 14Ohm @ 100mA, 10V | 3.5Ohm @ 200mA, 5V |
| Vgs(th)(Max) @ Id | 1.8V @ 56µA | 1.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 3.1 nC @ 10 V | - |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 77 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 360mW (Ta) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the primary differences between the BSS138LT1G and BSS131H6327XTSA1 MOSFETs?
The BSS138LT1G is a single N-channel logic-level MOSFET rated at 50 V V(BR)DSS and 200 mA continuous drain current, housed in a SOT-23 package. The BSS131H6327XTSA1 is a single N-channel MOSFET rated at 240 V V(BR)DSS and 170 mA continuous drain current, housed in a SOT-23 package. The BSS131H6327XTSA1 provides significantly higher drain-source voltage capability, while the BSS138LT1G offers higher current handling and lower on-resistance at low gate drive voltages.
Can the BSS138LT1G and BSS131H6327XTSA1 be used interchangeably in a design?
No, they are not direct substitutes. The BSS131H6327XTSA1 has a much higher breakdown voltage (240 V vs 50 V) but lower current rating (170 mA vs 200 mA) and different RDS(on) characteristics. Circuit designs must be validated against the specific parameters of each device, including gate threshold voltage, input capacitance, and thermal performance, before any substitution is considered.
What are the drain-source voltage ratings for the BSS138LT1G and BSS131H6327XTSA1?
The BSS138LT1G has a drain-source breakdown voltage V(BR)DSS of 50 V. The BSS131H6327XTSA1 has a drain-source breakdown voltage V(BR)DSS of 240 V. The BSS131H6327XTSA1 is therefore suitable for higher-voltage applications where the BSS138LT1G would be inadequate.
What is the continuous drain current rating for each device?
The BSS138LT1G is rated for a continuous drain current ID of 200 mA at 25°C. The BSS131H6327XTSA1 is rated for a continuous drain current ID of 170 mA at 25°C. The BSS138LT1G offers a slightly higher current capability, but both are low-power signal-level MOSFETs.
Do the BSS138LT1G and BSS131H6327XTSA1 share the same package and pinout?
Yes, both devices are offered in a SOT-23 (TO-236) surface-mount package with the same pinout: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain. This package similarity allows for PCB layout compatibility, but electrical differences must still be evaluated for any given application.
What are the typical on-resistance RDS(on) values for these MOSFETs?
The BSS138LT1G has a typical RDS(on) of 3.5 Ω at VGS = 10 V and 6 Ω at VGS = 4.5 V, with ID = 200 mA. The BSS131H6327XTSA1 has a typical RDS(on) of 14 Ω at VGS = 10 V and 20 Ω at VGS = 4.5 V, with ID = 170 mA. The BSS138LT1G provides lower conduction losses in low-voltage gate-drive applications.
Which device is better suited for level-shifting or low-voltage switching applications?
The BSS138LT1G is commonly used for level-shifting and low-voltage switching due to its logic-level gate threshold (VGS(th) typically 0.8 V to 1.5 V) and lower RDS(on) at 4.5 V gate drive. The BSS131H6327XTSA1 has a higher gate threshold voltage (VGS(th) typically 1.5 V to 2.5 V) and is optimized for higher-voltage, lower-current applications rather than low-voltage level shifting.
Are there differences in gate charge and input capacitance that affect switching performance?
Yes. The BSS138LT1G has a typical total gate charge Qg of 2.4 nC at VGS = 10 V and input capacitance Ciss of approximately 27 pF. The BSS131H6327XTSA1 has a typical Qg of 4.5 nC at VGS = 10 V and Ciss of approximately 110 pF. The BSS138LT1G generally switches faster and requires less gate drive energy, while the BSS131H6327XTSA1 has higher capacitance and is intended for higher-voltage circuits where switching speed is less critical.