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BSO615CGHUMA1
+物料清單MOSFET N/P-CH 60V 3.1A/2A 8SOIC
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製造商英飛淩科技
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製造商部分 #BSO615CGHUMA1
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有存貨8676
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | SIPMOS® |
| ProductStatus | Obsolete |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 3.1A, 2A |
| RdsOn(Max)@IdVgs | 110mOhm @ 3.1A, 10V |
| Vgs(th)(Max)@Id | 2V @ 20µA |
| GateCharge(Qg)(Max)@Vgs | 22.5nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 380pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
