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MOSFET N/P-CH 60V 3.1A/2A 8SOIC
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製造商英飛淩科技
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製造商部分 #BSO615CGHUMA1
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包裹 SOIC-8
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有存貨8676
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90-日售後保障
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規格
| 屬性 | 價值 |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | SIPMOS® |
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 3.1A, 2A |
| Rds On(Max) @ Id Vgs | 110mOhm @ 3.1A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 20µA |
| Gate Charge(Qg)(Max) @ Vgs | 22.5nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 380pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
