AS4C8M16SB-6TIN

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AS4C8M16SB-6TIN

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IC DRAM 128MBIT LVTTL 54TSOP II

  • 製造商Alliance Memory,股份有限公司。

  • 製造商部分 #AS4C8M16SB-6TIN

  • 有存貨6005

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規格

屬性 價值
Part Status Active
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 128Mbit
Memory Organization 8M x 16
Memory Interface LVTTL
Write Cycle Time - Word, Page 12ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package 54-TSOP II
Base Product Number AS4C8M16
Clock Frequency 166 MHz
Access Time 5 ns

概述

Description

The AS4C8M16SB-6TIN is a high-performance, 128Mb (megabit) asynchronous DRAM (Dynamic Random Access Memory) chip. It is organized as 8M x 16 bits, meaning it has a capacity of 8 million 16-bit words. This memory component is often used in applications requiring reliable and fast data storage and retrieval, such as telecommunications, networking, and embedded systems.
Key features of the AS4C8M16SB-6TIN include a fast access time of 60ns (nanoseconds), making it suitable for high-speed data processing tasks. The chip operates from a single 3.3V power supply, offering low power consumption, which is crucial for battery-powered and energy-efficient devices. It is housed in a 54-pin TSOP II package, allowing for compact integration into circuit boards.
The "6TIN" in its name often specifies certain temperature and packaging characteristics, indicating it is suitable for industrial temperature ranges. Overall, this DRAM chip is valued for its balance of performance, capacity, and power efficiency, making it a versatile choice in various technological applications.

Equivalent

The AS4C8M16SB-6TIN is a 128Mb SDRAM chip. Equivalent products include:
1. Micron MT48LC8M16A2 – A 128Mb SDRAM with similar specifications.
2. Samsung K4S281632I – Another 128Mb SDRAM option.
3. Alliance Memory AS4C8M16 – A direct equivalent with similar performance.
4. ISSI IS42S16160 – A 128Mb SDRAM with comparable features.
When considering alternatives, ensure compatibility with your specific requirements in terms of speed, voltage, and temperature range.

Features

The AS4C8M16SB-6TIN is a high-performance Synchronous Dynamic Random-Access Memory (SDRAM) component with the following key features:
1. Capacity and Organization: 128 Megabit (8M x 16-bit configuration).
2. Speed: Operates at a clock frequency of up to 166 MHz with a cycle time of 6 ns.
3. Voltage: Requires a power supply of 3.3V ± 0.3V.
4. Interface: Synchronous interface for precise data access.
5. Burst Lengths: Supports burst lengths of 1, 2, 4, 8, and full-page for efficient data transfer.
6. Latency: Provides CAS latency options of 2 and 3, allowing for flexibility in performance tuning.
7. Package: Offered in a 54-pin TSOP II package for a compact form factor.
8. Temperature Range: Designed to operate within industrial temperature ranges from -40°C to 85°C, making it suitable for various applications.
9. Auto-Refresh: Includes auto-refresh and self-refresh modes for maintaining data integrity.
These features make the AS4C8M16SB-6TIN suitable for applications requiring reliable and efficient memory performance.

Pinout

The AS4C8M16SB-6TIN is a 128Mb (megabit) SDRAM organized as 8M x 16 bits. It comes in a 54-pin TSOP II package. The functions of its pins are typical for an SDRAM, including:
- Data Pins (DQ0-DQ15): 16 data input/output pins.
- Address Pins (A0-A12): Address input pins allowing row and column selection within the memory array.
- Bank Address Pins (BA0-BA1): Bank select pins used to select one of the four available memory banks.
- Clock (CLK): Synchronizes operation of the memory.
- Clock Enable (CKE): Enables or disables the clock.
- Chip Select (CS#): Activates or deactivates the memory chip.
- Row Address Strobe (RAS#), Column Address Strobe (CAS#), and Write Enable (WE#): Control signals used to initiate read/write operations.
- Data Mask (UDQM, LDQM): Used for byte masking in data operations.
- Power (VDD, VSS): Power supply and ground connections.
This configuration allows the SDRAM to perform the storage and retrieval of data efficiently in a wide range of electronic applications.

Manufacturer

The AS4C8M16SB-6TIN is manufactured by Alliance Memory. Alliance Memory is a company that specializes in the design and manufacture of legacy memory products. They focus on providing DRAM and SRAM memory solutions, particularly for applications that require stable and long-term product availability. Their offerings are generally aimed at industries needing reliable memory components, such as telecommunications, industrial applications, and consumer electronics, where long life cycles and consistent performance are critical.

Application

The AS4C8M16SB-6TIN is a 128Mb SDRAM chip used primarily in applications requiring fast data processing and storage capabilities. Key application areas include embedded systems, industrial automation, telecommunications, networking devices, and consumer electronics. Its ability to efficiently handle high-speed data makes it suitable for tasks such as buffering, caching, and data manipulation in routers, switches, and similar devices. Additionally, it can be used in automotive electronics for infotainment systems, as well as in medical devices that require robust and reliable memory solutions. Its compact size and low power consumption also make it ideal for portable and battery-operated devices.

Package

The AS4C8M16SB-6TIN is a DRAM component provided in a 54-pin thin small outline package (TSOP) type II. This package type is commonly used for memory chips, offering a compact design suitable for surface mounting on circuit boards.

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