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規格
| 屬性 | 價值 |
| Manufacturer | SPTECH |
| Package / Case | TO-3PN |
| Pd - Power Dissipation | 80W |
| type | NPN |
| Current - Collector(Ic) | 10A |
| Collector - Emitter Voltage VCEO | 400V |
| Current - Collector Cutoff | 1mA |
| DC Current Gain | 10@4A,5V |
| Vce Saturation(VCE(sat)) | 1.2V |
概述
Description
The 2SC2625 is a high-frequency NPN bipolar junction transistor (BJT) designed for RF amplification and oscillation in VHF/UHF applications. Key features include:
- High Transition Frequency (fT): ~1.5 GHz, suitable for RF circuits.
- Low Noise: Optimized for low-noise amplification.
- Moderate Power Handling: Collector current (Ic) up to 50 mA, collector-emitter voltage (Vce) up to 30 V.
- Package: Typically comes in a small TO-92 or similar package.
Commonly used in FM tuners, RF amplifiers, and communication devices, the 2SC2625 is now often replaced by modern equivalents (e.g., 2SC3356 or BFG67) due to obsolescence. Always check datasheets for exact specifications and substitutes.
- High Transition Frequency (fT): ~1.5 GHz, suitable for RF circuits.
- Low Noise: Optimized for low-noise amplification.
- Moderate Power Handling: Collector current (Ic) up to 50 mA, collector-emitter voltage (Vce) up to 30 V.
- Package: Typically comes in a small TO-92 or similar package.
Commonly used in FM tuners, RF amplifiers, and communication devices, the 2SC2625 is now often replaced by modern equivalents (e.g., 2SC3356 or BFG67) due to obsolescence. Always check datasheets for exact specifications and substitutes.
Pinout
The 2SC2625 is a silicon NPN transistor commonly used in high-frequency amplification.
- Pin Count: 3 (Emitter, Base, Collector)
- Functions:
- Emitter (E): Current flows out.
- Base (B): Controls transistor switching/amplification.
- Collector (C): Current flows in (main terminal for power handling).
Key specs:
- VCEO: 50V (max collector-emitter voltage)
- IC: 100mA (max collector current)
- fT: ~200MHz (transition frequency)
Commonly used in RF and general-purpose amplification circuits.
- Pin Count: 3 (Emitter, Base, Collector)
- Functions:
- Emitter (E): Current flows out.
- Base (B): Controls transistor switching/amplification.
- Collector (C): Current flows in (main terminal for power handling).
Key specs:
- VCEO: 50V (max collector-emitter voltage)
- IC: 100mA (max collector current)
- fT: ~200MHz (transition frequency)
Commonly used in RF and general-purpose amplification circuits.
Manufacturer
The 2SC2625 is a high-frequency NPN transistor manufactured by Toshiba, a well-known Japanese multinational conglomerate specializing in electronics and semiconductors. Toshiba has been a major player in semiconductor production, offering a wide range of components for consumer electronics, industrial applications, and power systems. The 2SC2625 is commonly used in RF amplification and switching circuits. Toshiba is recognized for its reliable and high-performance semiconductor products.
Application
The 2SC2625 is a high-frequency NPN transistor commonly used in:
1. RF Amplification – Boosts signals in radio frequency (RF) stages.
2. Oscillator Circuits – Used in RF oscillators for stable frequency generation.
3. Communication Equipment – Found in transmitters, receivers, and wireless devices.
4. High-Speed Switching – Suitable for fast-switching applications.
Its high transition frequency (fT) and low noise make it ideal for RF and microwave applications.
1. RF Amplification – Boosts signals in radio frequency (RF) stages.
2. Oscillator Circuits – Used in RF oscillators for stable frequency generation.
3. Communication Equipment – Found in transmitters, receivers, and wireless devices.
4. High-Speed Switching – Suitable for fast-switching applications.
Its high transition frequency (fT) and low noise make it ideal for RF and microwave applications.
Package
The 2SC2625 is a silicon NPN transistor typically available in a TO-92 package, a common through-hole plastic casing with three leads. It's used for general-purpose amplification and switching applications. The TO-92 package is compact, cost-effective, and suitable for low-power circuits.
