SI4946BEY-T1-E3 vs SI4948BEY-T1-E3

對 SI4946BEY-T1-E3 和 SI4948BEY-T1-E3 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

SI4946BEY-T1-E3

矽尼克斯

Lifecycle: Active
Stock: 4646 件
Package: SOIC-8
Series: 電晶體-FET、MOSFET-陣列

+物料清單詢價

Part B

SI4948BEY-T1-E3

矽尼克斯

Lifecycle: Active
Stock: 6037 件
Package: SOIC-8
Series: 電晶體-FET、MOSFET-陣列

+物料清單詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	SI4946BEY-T1-E3	SI4948BEY-T1-E3
Series	TrenchFET®	TrenchFET®
Part Status	Active	Active
FET Type	2 N-Channel (Dual)	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	60V	60V
Current - Continuous Drain(Id) @ 25°C	6.5A	2.4A
Rds On(Max) @ Id Vgs	41mOhm @ 5.3A, 10V	120mOhm @ 3.1A, 10V
Vgs(th)(Max) @ Id	3V @ 250µA	3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	25nC @ 10V	22nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds	840pF @ 30V	-
Power - Max	3.7W	1.4W
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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