MMBT5551 vs MMBT5550LT1G

對 MMBT5551 和 MMBT5550LT1G 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MMBT5551

Guangdong Inmark Electronics Co., Ltd.

Lifecycle
Active
Stock
3024 件
Series
電晶體-雙極電晶體（BJT）-單雙極電晶體
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBT5551 MMBT5550LT1G
Part Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 600 mA -
Voltage - Collector Emitter Breakdown (Max) 160 V -
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) 50µA -
DC Current Gain (h FE) (Min) @ Ic, Vce 80 @ 10mA, 5V -
Power - Max 350 mW 225 mW
Frequency - Transition 300MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (TR) -
Current - Collector(Ic)(Max) - 600 mA
Voltage - Collector Emitter Breakdown(Max) - 140 V
Vce Saturation(Max) @ Ib Ic - 250mV @ 5mA, 50mA
Current - Collector Cutoff(Max) - 100nA
DC Current Gain(h FE)(Min) @ Ic Vce - 60 @ 10mA, 5V
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