MMBT3906LT1 vs MMBT3646

對 MMBT3906LT1 和 MMBT3646 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part B

MMBT3646

安森美

Lifecycle
Active
Stock
7189 件
Package
TO-236-3
Series
電晶體-雙極型電晶體（BJT）-單
+物料清單 詢價

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

詢價 Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBT3906LT1 MMBT3646
Supplier Rochester Electronics, LLC onsemi,Flip Electronics,Rochester Electronics, LLC
Part Status Obsolete Obsolete
Transistor Type PNP NPN
Current - Collector(Ic)(Max) 200 mA 300 mA
Voltage - Collector Emitter Breakdown(Max) 40 V 15 V
Vce Saturation(Max) @ Ib Ic 400mV @ 5mA, 50mA 500mV @ 30mA, 300mA
Current - Collector Cutoff(Max) - 500nA
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 10mA, 1V 30 @ 30mA, 400mV
Power - Max 225 mW 625 mW
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Frequency - Transition 250MHz -
Compare 詢價