MMBT3906LT1 vs MMBT3640

對 MMBT3906LT1 和 MMBT3640 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part B

MMBT3640

安森美

Lifecycle
Active
Stock
22607 件
Package
TO-236-3
Series
電晶體-雙極型電晶體（BJT）-單
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBT3906LT1 MMBT3640
Supplier Rochester Electronics, LLC onsemi
Part Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector(Ic)(Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown(Max) 40 V 12 V
Vce Saturation(Max) @ Ib Ic 400mV @ 5mA, 50mA 600mV @ 5mA, 50mA
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 10mA, 1V 30 @ 10mA, 300mV
Power - Max 225 mW 225 mW
Frequency - Transition 250MHz 500MHz
Mounting Type Surface Mount Surface Mount
Current - Collector Cutoff(Max) - 10nA
Operating Temperature - -55°C ~ 150°C (TJ)
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