MMBT3906WT1G vs MMBT3904

對 MMBT3906WT1G 和 MMBT3904 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

MMBT3904

HY電子（開曼）有限公司

Lifecycle
Active
Stock
3505 件
Package
SOT-23-3
Series
電晶體-雙極型電晶體（BJT）-單
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBT3906WT1G MMBT3904
Part Status Active Active
Transistor Type PNP NPN
Current - Collector(Ic)(Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown(Max) 40 V 40 V
Vce Saturation(Max) @ Ib Ic 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 150 mW 200 mW
Frequency - Transition 250MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - MMBT3904
Current - Collector Cutoff(Max) - 50nA
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