圖片僅供參考
MMBT3906WT1G
+物料清單TRANS PNP 40V 0.2A SC70-3
-
製造商安森美
-
製造商部分 #MMBT3906WT1G
-
有存貨5464
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 200 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 40 V |
| VceSaturation(Max)@IbIc | 400mV @ 5mA, 50mA |
| DCCurrentGain(hFE)(Min)@IcVce | 100 @ 10mA, 1V |
| Power-Max | 150 mW |
| Frequency-Transition | 250MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SC-70, SOT-323 |
概述
Description
The MMBT3906WT1G is a PNP bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose amplification and switching applications. Key features include:
- Voltage Rating: -40V (VCEO)
- Current Rating: -200mA (IC)
- Power Dissipation: 200mW
- Gain Bandwidth Product (fT): 250MHz
- Package: SOT-323 (small surface-mount)
It is commonly used in signal amplification, load switching, and digital logic circuits due to its fast switching speed and compact size. The WT1G suffix denotes a lead-free, RoHS-compliant variant.
For detailed specs, refer to the datasheet from ON Semiconductor.
- Voltage Rating: -40V (VCEO)
- Current Rating: -200mA (IC)
- Power Dissipation: 200mW
- Gain Bandwidth Product (fT): 250MHz
- Package: SOT-323 (small surface-mount)
It is commonly used in signal amplification, load switching, and digital logic circuits due to its fast switching speed and compact size. The WT1G suffix denotes a lead-free, RoHS-compliant variant.
For detailed specs, refer to the datasheet from ON Semiconductor.
Equivalent
Equivalent products to the MMBT3906WT1G (PNP transistor) include:
- BC807W (SOT-323)
- 2N3906 (TO-92, similar specs)
- BC856W (SOT-323, higher current)
- PMBT3906 (SOT-23, comparable specs)
Check pinouts and specs (e.g., Vceo, Ic) for compatibility. Always verify with datasheets.
- BC807W (SOT-323)
- 2N3906 (TO-92, similar specs)
- BC856W (SOT-323, higher current)
- PMBT3906 (SOT-23, comparable specs)
Check pinouts and specs (e.g., Vceo, Ic) for compatibility. Always verify with datasheets.
Features
The MMBT3906WT1G is a PNP bipolar junction transistor (BJT) with the following key features:
- Type: PNP Transistor
- Voltage Ratings:
- Collector-Emitter Voltage (VCEO): -40V
- Collector-Base Voltage (VCBO): -40V
- Emitter-Base Voltage (VEBO): -5V
- Current Ratings:
- Continuous Collector Current (IC): -200mA
- Peak Collector Current (ICM): -600mA
- Power Dissipation (PD): 350mW
- DC Current Gain (hFE): 100–300 (at IC = -10mA, VCE = -1V)
- Switching Speed:
- Turn-on Time (ton): 35ns
- Turn-off Time (toff): 250ns
- Package: SOT-323 (SC-70) (small surface-mount)
- Applications: Switching, amplification, and signal processing in compact circuits.
Compact, reliable, and suitable for low-power applications.
- Type: PNP Transistor
- Voltage Ratings:
- Collector-Emitter Voltage (VCEO): -40V
- Collector-Base Voltage (VCBO): -40V
- Emitter-Base Voltage (VEBO): -5V
- Current Ratings:
- Continuous Collector Current (IC): -200mA
- Peak Collector Current (ICM): -600mA
- Power Dissipation (PD): 350mW
- DC Current Gain (hFE): 100–300 (at IC = -10mA, VCE = -1V)
- Switching Speed:
- Turn-on Time (ton): 35ns
- Turn-off Time (toff): 250ns
- Package: SOT-323 (SC-70) (small surface-mount)
- Applications: Switching, amplification, and signal processing in compact circuits.
Compact, reliable, and suitable for low-power applications.
Pinout
The MMBT3906WT1G is a PNP bipolar junction transistor (BJT) in a SOT-323 (SC-70) surface-mount package.
- Pin Count: 3 (Emitter, Base, Collector)
- Pinout (SOT-323):
1. Emitter (E)
2. Base (B)
3. Collector (C)
Key Functions:
- General-purpose amplification and switching.
- Low voltage (max -40V VCEO) and moderate current (max -200mA IC).
- Fast switching speed, suitable for high-frequency applications.
Commonly used in signal amplification, switching circuits, and driver stages.
- Pin Count: 3 (Emitter, Base, Collector)
- Pinout (SOT-323):
1. Emitter (E)
2. Base (B)
3. Collector (C)
Key Functions:
- General-purpose amplification and switching.
- Low voltage (max -40V VCEO) and moderate current (max -200mA IC).
- Fast switching speed, suitable for high-frequency applications.
Commonly used in signal amplification, switching circuits, and driver stages.
Application
The MMBT3906WT1G is a PNP bipolar junction transistor (BJT) commonly used in:
1. Switching Circuits – Low-power switching in digital/logic applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Signal Inversion – Used in logic level shifters and inverters.
4. Load Driving – Controls small relays, LEDs, or other low-current devices.
5. Consumer Electronics – Found in smartphones, tablets, and portable devices.
Its compact SOT-323 package makes it ideal for space-constrained PCB designs.
1. Switching Circuits – Low-power switching in digital/logic applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Signal Inversion – Used in logic level shifters and inverters.
4. Load Driving – Controls small relays, LEDs, or other low-current devices.
5. Consumer Electronics – Found in smartphones, tablets, and portable devices.
Its compact SOT-323 package makes it ideal for space-constrained PCB designs.
Package
The MMBT3906WT1G is a PNP bipolar junction transistor (BJT) in a SOT-323 surface-mount package. This compact package is designed for high-density PCB applications, featuring three leads and small dimensions (approx. 2.1mm x 2.0mm x 0.9mm). It is commonly used in switching and amplification circuits.
