IRLML6346TRPBF vs IRLML2502TRPBF
對 IRLML2502TRPBF 和 IRLML6346TRPBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
SOT-23
描述
MOSFET N-CH 20V 4.2A SOT23
MOSFET N-CH 30V 3.4A SOT23
Series
HEXFET®
HEXFET®
Part Status
Last Time Buy
-
Base Product Number
IRLML2502
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
-
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
-
Rds On (Max) @ Id, Vgs
45mOhm @ 4.2A, 4.5V
-
Vgs(th) (Max) @ Id
1.2V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
-
Vgs (Max)
±12V
-
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 15 V
-
Power Dissipation (Max)
1.25W (Ta)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
30 V
Current-ContinuousDrain(Id)@25°C
-
3.4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)
-
2.5V, 4.5V
RdsOn(Max)@IdVgs
-
63mOhm @ 3.4A, 4.5V
Vgs(th)(Max)@Id
-
1.1V @ 10µA
GateCharge(Qg)(Max)@Vgs
-
2.9 nC @ 4.5 V
Vgs(Max)
-
±12V
InputCapacitance(Ciss)(Max)@Vds
-
270 pF @ 24 V
PowerDissipation(Max)
-
1.3W (Ta)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
